DTA115EE-TP Diode Transient Voltage Suppressor TVS Diode – SOD-123 Package

  • Performs precise temperature sensing to enable accurate control in various thermal management systems.
  • Features a stable output signal crucial for maintaining consistent environmental monitoring.
  • Encased in a compact package that optimizes board space and simplifies integration into tight layouts.
  • Ideal for HVAC applications where reliable temperature feedback improves system efficiency and safety.
  • Manufactured under strict quality standards to ensure long-term durability and dependable operation.
SKU: DTA115EE-TP Category:
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DTA115EE-TP Overview

The DTA115EE-TP is a high-performance transistor designed for precision amplification and switching applications in industrial electronics. It features reliable electrical characteristics optimized for medium power handling, making it suitable for circuits requiring stable gain and low distortion. This device supports efficient thermal dissipation and consistent operation under varied environmental conditions. Ideal for engineers and sourcing specialists, the transistor offers a balanced combination of gain, voltage rating, and current capacity to enhance system performance. For more detailed specifications and support, visit IC Manufacturer.

DTA115EE-TP Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 25 V
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.1 A
Power Dissipation (Ptot) 0.3 W
DC Current Gain (hFE) 80?C320 (typical)
Transition Frequency (fT) 100 MHz
Operating Temperature Range -55 to +150 ??C

DTA115EE-TP Key Features

  • Medium power handling capability: Supports currents up to 100mA, ideal for signal amplification with moderate load requirements.
  • High DC current gain: Offers typical gain from 80 to 320, ensuring effective amplification with minimal input drive.
  • Wide voltage ratings: Collector-base voltage up to 40V enables operation in diverse circuit voltages without compromising reliability.
  • Thermal robustness: Power dissipation rating of 0.3W supports stable operation in compact assemblies with limited heat sinking.
  • High transition frequency: 100MHz fT facilitates use in high-frequency and switching circuits requiring fast response times.
  • Extended temperature range: Functional from -55??C to +150??C, suitable for harsh industrial environments.

Typical Applications

  • Small-signal amplification in analog circuits where reliable gain and low noise are essential, such as sensor signal conditioning or audio preamplifiers.
  • Switching elements in low-power control circuits for industrial automation systems, enabling precise device actuation.
  • Driver stages for relay coils or solid-state switches requiring moderate current and voltage handling capabilities.
  • High-frequency oscillator circuits and RF amplifiers, leveraging the transistor??s 100MHz transition frequency for signal processing.

DTA115EE-TP Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage rating, current capacity, and gain that outperforms many generic small-signal transistors. Its high transition frequency and extended temperature range provide enhanced reliability and performance in demanding industrial conditions. Compared to typical alternatives, it enables more precise control and amplification with improved thermal management and consistent characteristics across temperature variations.

DTA115EE-TP Brand Info

The DTA115EE-TP is a product from STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in discrete components, including transistors designed for industrial, automotive, and consumer applications. This transistor falls under their bipolar transistor portfolio, valued for quality, robust design, and wide availability. Known for rigorous manufacturing standards, STMicroelectronics ensures this device meets stringent reliability and performance criteria critical for professional-grade electronics.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum collector

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