DTA114YUAHE3-TP Overview
The DTA114YUAHE3-TP is a high-performance transistor designed for precision amplification and switching applications in industrial electronics. It features a robust design optimized for reliable operation under varying thermal and electrical conditions. With its compact package and stable electrical characteristics, this device suits demanding environments requiring consistent gain and low noise. It supports efficient power management and signal integrity in circuits, making it a preferred choice for engineers and sourcing specialists focused on durable and efficient semiconductor components. For detailed sourcing and technical support, visit IC Manufacturer.
DTA114YUAHE3-TP Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 100 mA |
| Gain Bandwidth Product (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 to 300 |
| Package Type | SOT-23 |
| Power Dissipation (Ptot) | 300 mW |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Transition Frequency | Up to 100 MHz |
DTA114YUAHE3-TP Key Features
- High current gain: Ensures efficient amplification, improving signal strength in low-power circuits.
- Wide operating temperature range: Maintains stable performance from -55 ??C to +150 ??C, suitable for harsh industrial environments.
- Compact SOT-23 package: Facilitates space-saving PCB designs and easy surface mounting.
- Low collector-emitter saturation voltage: Reduces power loss, enhancing overall system efficiency.
Typical Applications
- Signal amplification in industrial sensor interfaces, enabling accurate data acquisition under variable conditions.
- Switching elements in low-voltage power management circuits.
- General-purpose audio amplification in embedded systems.
- Driver stages for small motors or relays in control systems.
DTA114YUAHE3-TP Advantages vs Typical Alternatives
This transistor offers an excellent balance of gain, frequency response, and thermal stability compared to typical alternatives. Its low saturation voltage and compact package reduce power dissipation and board space. The wide temperature range ensures reliability in industrial deployments. These factors combined make it a highly efficient and dependable choice for engineers requiring consistent performance in demanding environments.
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DTA114YUAHE3-TP Brand Info
The DTA114YUAHE3-TP is manufactured by Diodes Incorporated, a global leader in high-quality discrete, logic, and analog semiconductor components. Diodes Incorporated is known for providing robust and reliable devices optimized for industrial and consumer electronics. This product exemplifies the company??s commitment to delivering precision and durability in their transistor portfolio, supporting a wide range of applications from signal processing to power management.
FAQ
What type of transistor is the DTA114YUAHE3-TP?
The DTA114YUAHE3-TP is an NPN bipolar junction transistor (BJT) designed for amplification and switching applications. It offers a high current gain and is suitable for low-power industrial circuits.
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What are the maximum voltage and current ratings?
This transistor supports a maximum collector-emitter voltage of 40 V and a collector current of up to 100 mA, making it suitable for moderate voltage and current applications.
Which package is used for this transistor?
The device is housed in a compact SOT-23 surface-mount package, allowing it to be integrated easily into modern PCB layouts with limited space.
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What is the operating temperature range of the device?
The operational temperature range of the transistor extends from -55 ??C to +150 ??C, ensuring reliable performance in both industrial and automotive environments.
How does the DTA114YUAHE3-TP perform in high-frequency applications?
With a gain bandwidth product of
