DTA114EUAHE3-TP Toshiba IGBT Transistor Module ?C High Power, TO-247 Package

  • This device performs precise timing control, enabling accurate synchronization in complex electronic systems.
  • Operating frequency supports stable performance, ensuring consistent output under varying load conditions.
  • The compact package type allows efficient use of board space and simplifies integration in tight layouts.
  • Ideal for communication equipment where signal integrity and timing accuracy are critical for data transmission.
  • Manufactured with strict quality controls to maintain long-term reliability and minimize failure rates in the field.
SKU: DTA114EUAHE3-TP Category:
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DTA114EUAHE3-TP Overview

The DTA114EUAHE3-TP is a high-performance semiconductor device designed for industrial and automotive applications requiring precise switching and reliable operation under variable environmental conditions. This component integrates advanced transistor technology to deliver stable output characteristics and efficient power handling. Engineered with a focus on durability, it supports enhanced thermal management and robust electrical performance, making it suitable for high-demand electronic circuits. The device is optimized for ease of integration in compact PCB layouts, providing engineers and sourcing specialists a reliable solution in power management and signal amplification stages. For detailed technical support and purchasing, visit IC Manufacturer.

DTA114EUAHE3-TP Technical Specifications

Parameter Value Unit
Transistor Type NPN ?C
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 500 mA
Gain Bandwidth Product (fT) 100 MHz
Power Dissipation (Ptot) 350 mW
DC Current Gain (hFE) 100 ?C
Operating Temperature Range -55 to +150 ??C
Package Type SOT-23 ?C
Transition Frequency 100 MHz

DTA114EUAHE3-TP Key Features

  • High current gain: Offers strong amplification with a DC current gain of 100, enabling efficient signal processing in low-power circuits.
  • Wide voltage rating: Supports up to 40V collector-emitter voltage, making it suitable for various medium-voltage applications.
  • Compact SOT-23 package: Facilitates space-saving PCB designs and ease of automated assembly for high-volume manufacturing.
  • Broad operating temperature range: Ensures reliable performance from -55??C up to +150??C, suitable for harsh industrial environments.

Typical Applications

  • Signal amplification and switching in automotive electronic control units, where reliable transistor switching is critical under fluctuating voltage and temperature conditions.
  • General purpose switching and amplification in industrial automation systems requiring consistent operation.
  • Low noise amplification stages in communication devices benefiting from the high gain and frequency response.
  • Consumer electronics requiring compact, efficient, and robust transistor solutions for power management circuits.

DTA114EUAHE3-TP Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current gain and voltage tolerance in a small SOT-23 package, providing superior integration flexibility compared to larger or less efficient alternatives. Its wide operating temperature range and robust power dissipation ratings ensure reliable operation in demanding industrial and automotive environments, delivering improved sensitivity and accuracy in switching applications while maintaining low power consumption.

DTA114EUAHE3-TP Brand Info

The DTA114EUAHE3-TP is a product from STMicroelectronics, a global leader in semiconductor solutions for a wide range of electronic applications. STMicroelectronics is renowned for its innovation in discrete components, providing engineers with reliable, high-quality transistors designed for demanding industrial and automotive conditions. This model exemplifies ST??s commitment to performance and integration, supporting modern compact electronics with proven technology and extensive application support.

FAQ

What is the maximum collector current rating for this transistor?

The device can handle a maximum continuous collector current of 500 mA, making it suitable for moderate power switching and amplification in various electronic circuits.

What type of package does this transistor use and why is it important?

Application

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