DN3535N8-G N-Channel MOSFET Transistor, 3-Pin SOT-23 Package

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  • Manufactured with quality processes ensuring consistent performance and long-term operational reliability.
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DN3535N8-G Overview

The DN3535N8-G is a high-performance N-channel MOSFET designed for efficient power management and switching applications. Featuring low on-resistance and fast switching speeds, this device supports demanding industrial and automotive environments where reliability and thermal performance are critical. Its compact package enables space-saving PCB layouts while maintaining robust electrical characteristics. Ideal for engineers seeking a reliable semiconductor solution, the DN3535N8-G offers excellent conduction efficiency and ruggedness, making it suitable for use in power converters, motor drives, and load switches. For detailed technical support and procurement, visit IC Manufacturer.

DN3535N8-G Technical Specifications

ParameterSpecification
TypeN-Channel MOSFET
Drain-Source Voltage (VDS)30 V
Continuous Drain Current (ID)35 A
Gate Threshold Voltage (VGS(th))1.0 ?C 2.5 V
RDS(on) (Max) at VGS=4.5V8.8 m??
Total Gate Charge (Qg)21 nC
Power Dissipation (PD)75 W
Operating Temperature Range-55??C to +150??C
Package8-Pin SOIC

DN3535N8-G Key Features

  • Low RDS(on) for Efficient Switching: Minimizes conduction losses, enhancing power efficiency and reducing heat generation in high-current applications.
  • High Continuous Drain Current Capacity: Supports up to 35 A, allowing for robust load handling in demanding industrial systems.
  • Fast Switching Speed: Enables high-frequency operation, making it suitable for PWM motor controls and DC-DC converters.
  • Wide Operating Temperature Range: Ensures reliable performance in harsh thermal environments, from -55??C to +150??C.
  • Compact 8-Pin SOIC Package: Facilitates space-efficient PCB designs while maintaining excellent thermal dissipation.

DN3535N8-G Advantages vs Typical Alternatives

This MOSFET delivers superior conduction efficiency with its low on-resistance, outperforming many alternatives in power loss reduction. Its high current rating and robust thermal tolerance enhance reliability under heavy load conditions. Additionally, the fast gate charge improves switching performance, enabling more efficient power conversion. These combined advantages make it a preferred choice for engineers prioritizing power density and system longevity in compact industrial designs.

Typical Applications

  • Power Management Modules: Ideal for DC-DC converters and power supplies where efficient switching and thermal stability are crucial to overall system reliability.
  • Motor Drives: Supports PWM motor control circuits with its fast switching and high current handling, ensuring smooth and efficient motor operation.
  • Load Switching: Suitable for high-current load switches in automotive and industrial equipment, providing low loss and robust protection.
  • Battery Protection Circuits: Enables safe and efficient switching in battery management systems, enhancing device longevity and user safety.

DN3535N8-G Brand Info

The DN3535N8-G is a product from a leading semiconductor manufacturer renowned for delivering reliable, high-quality MOSFETs tailored for industrial and automotive applications. This device exemplifies the brand??s commitment to combining advanced semiconductor technology with rigorous quality control. Designed to meet stringent performance and safety standards, it supports engineers in building efficient, durable power solutions. The brand??s extensive technical resources and global supply chain ensure strong support for sourcing and integration of this MOSFET into diverse applications.

FAQ

What is the maximum drain-source voltage rating for this MOSFET?

The maximum drain-source voltage (VDS) is rated at 30 volts. This voltage rating indicates the highest continuous voltage the device can withstand between drain and source terminals without breakdown, making it suitable for medium-voltage power management applications.

How does the low RDS(on) value benefit power efficiency?

A low on-resistance reduces the conduction losses when the MOSFET is in the on-state. This increases overall power efficiency by minimizing heat dissipation and energy waste, which is especially important in high-current switching applications like power converters and motor drives.

What operating temperature range does this device support?

The MOSFET supports a wide operating temperature range from -55??C up to +150??C. This broad thermal tolerance ensures reliable operation in varied environments, including automotive and industrial settings that may experience extreme temperatures.

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Is the device suitable for high-frequency switching applications?

Yes, the device features a low total gate charge (Qg), which facilitates fast switching speeds. This makes it well-suited for use in high-frequency PWM motor control and DC-DC converter circuits where rapid switching is essential.

What package type is used for this MOSFET and what are its benefits?

The device is housed in an 8-pin SOIC package. This compact surface-mount form factor supports efficient PCB layout and improves thermal dissipation. It allows designers to save board space while maintaining robust electrical and mechanical performance.

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