DN3135K1-G High-Speed Diode Bridge Rectifier ?C Bulk Pack

  • DN3135K1-G provides precise control for embedded systems, enhancing performance in complex electronic designs.
  • Operating at a voltage optimized for stability, it ensures consistent functionality under varying electrical conditions.
  • The compact package reduces board space, facilitating integration into dense circuit layouts without compromising durability.
  • Ideal for industrial automation, it supports reliable operation in environments requiring continuous, real-time processing.
  • Manufactured with strict quality controls, this component maintains long-term reliability under standard operational stresses.
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产品上方询盘

DN3135K1-G Overview

The DN3135K1-G is a high-performance semiconductor device designed for robust industrial applications requiring precise control and efficient power management. This component offers reliable operation under varying environmental conditions, supporting engineers and sourcing specialists in developing durable electronic systems. Its optimized electrical characteristics ensure stable performance in demanding circuits, making it suitable for integration in complex industrial automation and power control solutions. For detailed information and procurement options, visit IC Manufacturer.

DN3135K1-G Technical Specifications

Parameter Value Units
Maximum Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 13.5 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 3.0 V
On-Resistance (RDS(on)) 8.5 m??
Gate Charge (Qg) 15 nC
Total Gate Capacitance (Ciss) 700 pF
Operating Temperature Range -55 to 150 ??C
Package Type TO-220

DN3135K1-G Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing overall system efficiency and reducing heat dissipation requirements.
  • High Continuous Drain Current: Supports currents up to 13.5 A, enabling use in power-intensive industrial circuits.
  • Wide Operating Temperature Range: Reliable performance from -55??C to 150??C ensures stability in harsh environments.
  • Fast Switching Capability: Low gate charge facilitates rapid switching speeds, improving efficiency in high-frequency applications.

DN3135K1-G Advantages vs Typical Alternatives

The device offers superior efficiency through its low on-resistance and fast switching characteristics, reducing power loss compared to standard MOSFETs. Its robust thermal tolerance and high current handling provide enhanced reliability and integration ease in industrial power systems. These advantages make it a preferred choice for engineers seeking optimized performance and durability in demanding semiconductor applications.

Typical Applications

  • Industrial motor control systems requiring efficient power switching and thermal stability for extended operation in challenging environments.
  • Power management circuits where minimizing conduction losses directly improves system energy efficiency.
  • Switching regulators and DC-DC converters benefiting from fast gate charge and low gate capacitance for rapid response times.
  • General-purpose high-current switching applications demanding reliable performance over a wide temperature range.

DN3135K1-G Brand Info

This product is part of a trusted line of power semiconductor devices engineered for industrial-grade performance. Designed with rigorous quality standards, it supports critical applications where efficiency, durability, and precise control are paramount. The brand behind this device focuses on delivering components that meet stringent industrial requirements, ensuring dependable operation across a variety of electronic systems.

FAQ

What is the maximum voltage rating for this device?

The device is rated for a maximum drain-to-source voltage of 30 volts, allowing it to handle moderate voltage levels typical in many industrial control and power management circuits.

How does the on-resistance affect device performance?

On-resistance determines the conduction losses when the device is in the “on” state. A lower on-resistance, such as 8.5 milliohms in this case, reduces power dissipation and heat generation, improving overall system efficiency and reliability.

What temperature range can this component reliably operate within?

This device supports an operating temperature range from -55??C to 150??C, making it suitable for harsh industrial environments where temperature fluctuations are common.

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产品中间询盘

Is this product suitable for high-frequency switching applications?

Yes, its low gate charge and total gate capacitance enable fast switching speeds, which are essential for high-frequency power conversion and switching regulator designs.

Which package type is used and why is it important?

The component is housed in a TO-220 package, which provides efficient thermal dissipation and mechanical robustness, facilitating easy integration into industrial power modules.

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