DDTD142JU-7-F Overview
The DDTD142JU-7-F is a high-performance semiconductor device designed for advanced industrial applications requiring reliable detection and signal processing. It features a robust design optimized for integration in electronic circuits with a focus on precise operation and durability under varying environmental conditions. This product supports engineers and sourcing specialists seeking a dependable component with consistent performance metrics. The device??s specifications ensure compatibility with a wide range of applications, making it a versatile choice for system designers. For detailed technical support and procurement, visit IC Manufacturer.
DDTD142JU-7-F Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Photodiode |
| Package | TO-46 Metal Can |
| Spectral Response Range | 350 nm to 1100 nm |
| Peak Sensitivity Wavelength | 940 nm |
| Dark Current | ?? 2 nA at 10 V reverse bias |
| Capacitance | 4 pF typical at 0 V bias |
| Reverse Voltage | Maximum 30 V |
| Rise Time | 8 ns typical at 10 V bias |
| Operating Temperature Range | -40??C to +85??C |
| Responsivity | 0.55 A/W at 940 nm |
DDTD142JU-7-F Key Features
- High sensitivity at near-infrared wavelengths: Enables precise detection in optical communication and sensing applications, improving signal reliability.
- Low dark current: Minimizes noise for enhanced accuracy in low-light environments, crucial for industrial measurement systems.
- Fast response time: Supports high-speed signal processing, allowing integration into systems requiring rapid data acquisition.
- Robust TO-46 metal can packaging: Ensures mechanical durability and thermal stability under harsh environmental conditions.
DDTD142JU-7-F Advantages vs Typical Alternatives
This device offers superior sensitivity and low noise performance compared to typical photodiodes, thanks to its low dark current and optimized responsivity at 940 nm. Its fast rise time ensures rapid response in dynamic applications, while the rugged metal can package improves long-term reliability and thermal management. These advantages translate to enhanced system accuracy and durability, reducing maintenance and improving operational uptime.
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Typical Applications
- Optical communication systems requiring high-speed infrared detection with low noise for accurate data transmission.
- Industrial sensor modules for position, proximity, and light measurement in automated production lines.
- Medical instrumentation where precise photodetection is critical for diagnostics and monitoring equipment.
- Consumer electronics integrating optical sensors for gesture recognition and environmental light sensing.
DDTD142JU-7-F Brand Info
The DDTD142JU-7-F is manufactured by a leading semiconductor company specializing in photodetector solutions. This product is part of a series designed to meet demanding industrial standards for performance and reliability. It reflects the company??s commitment to quality and innovation in optoelectronic components, serving a global customer base of engineers and system integrators who require high-precision, durable photodiodes for their applications.
FAQ
What is the typical dark current of the DDTD142JU-7-F under operating conditions?
The typical dark current for this photodiode is ?? 2 nA when biased at 10 V reverse voltage. This low dark current level helps reduce noise, improving the accuracy of optical measurements in low-light or sensitive environments.
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Can this device operate reliably in high-temperature environments?
Yes, the device supports an operating temperature range from -40??C to +85??C. Its robust metal can package ensures stable performance across this industrial temperature spectrum, making it suitable for harsh operating conditions.
What is the peak wavelength sensitivity of the photodiode?
The photodiode exhibits peak sensitivity at approximately 940 nm, making it ideal for near-infrared applications such as optical communication and infrared sensing technologies.
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How fast is the response time of the DDTD142JU-7-F?
The device features a typical rise time of 8 nanoseconds at a 10 V reverse bias,
