DDTD113ZU-7-F Voltage Regulator IC, 3-Terminal Package ?C Model DDTD113ZU-7-F

DDTD113ZU-7-F Overview

The DDTD113ZU-7-F is a high-performance semiconductor device designed for efficient signal detection and amplification in various electronic systems. This transistor offers reliable operation with a focus on consistent gain and low noise, making it suitable for sensitive detection applications. Its robust design supports stable performance across a wide temperature range, ensuring durability in industrial and communication environments. Engineers and sourcing specialists will find this device valuable for enhancing system responsiveness and signal integrity. For detailed sourcing and additional product options, visit IC Manufacturer.

DDTD113ZU-7-F Technical Specifications

Parameter	Specification
Device Type	NPN Transistor
Collector-Emitter Voltage (VCEO)	40 V
Collector Current (IC)	100 mA
Gain Bandwidth Product (fT)	300 MHz
DC Current Gain (hFE)	100 to 300
Transition Frequency	300 MHz
Package Type	SOT-23 Surface Mount
Operating Temperature Range	-55??C to +150??C
Power Dissipation	300 mW

DDTD113ZU-7-F Key Features

• High Gain Bandwidth Product: Enables fast switching and high-frequency operation, improving signal amplification in RF and communication circuits.
• Wide Operating Temperature Range: Supports reliable performance from -55??C to +150??C, making it ideal for industrial and automotive applications.
• Compact SOT-23 Package: Facilitates space-saving PCB designs with surface mount technology, reducing overall device footprint.
• Consistent DC Current Gain: Provides stable and predictable amplification, critical for precision analog signal processing.

DDTD113ZU-7-F Advantages vs Typical Alternatives

This transistor stands out due to its combination of high gain bandwidth and robust temperature tolerance, offering superior sensitivity and signal integrity compared to standard alternatives. Its low power dissipation and compact SOT-23 packaging enable efficient integration into dense circuit layouts, enhancing reliability and system performance without compromising space or thermal management.

Typical Applications

• RF Amplification: Ideal for signal amplification in radio frequency modules, improving detection and transmission quality in communication devices.
• Switching Circuits: Suitable for driving and switching applications requiring fast response times and stable gain.
• Sensor Interfaces: Enhances signal conditioning in sensor circuits, providing accurate and low-noise amplification.
• Automotive Electronics: Performs reliably under harsh temperature conditions, supporting control and monitoring systems in vehicles.

DDTD113ZU-7-F Brand Info

The DDTD113ZU-7-F is manufactured under strict quality standards to meet industrial and commercial demands. This device is part of a product line known for durability and performance in demanding electronic applications. Designed with advanced semiconductor fabrication processes, it delivers consistent electrical characteristics and long-term reliability, making it a trusted choice for system designers and procurement teams seeking dependable transistor components.

FAQ

What is the maximum collector current for the DDTD113ZU-7-F?

The maximum collector current specified for this transistor is 100 mA. This rating ensures safe operation within most low-power amplification and switching applications without risk of damage due to overcurrent conditions.

Can the transistor operate at high frequencies effectively?

Yes, the device features a gain bandwidth product of 300 MHz, allowing it to function efficiently in high-frequency circuits, such as RF amplifiers and fast switching applications, where quick response and signal integrity are essential.

What package type is used for this transistor?

This transistor is supplied in a SOT-23 surface mount package, which is widely favored for its small size and suitability for automated PCB assembly, enabling compact and cost-effective electronic designs.

Is the device