DDTC143XE-7-F Overview
The DDTC143XE-7-F is a high-performance dual transistor designed for demanding switching applications requiring fast response and low power loss. With its enhanced gain and switching speed, this device offers efficient signal amplification and switching capabilities in compact form factor. It is optimized for reliable operation in industrial and consumer electronics environments, delivering consistent performance across a wide temperature range. Engineers and sourcing specialists will find it suitable for applications requiring robust transistor solutions with proven stability and integration ease. For detailed sourcing and technical support, visit IC Manufacturer.
DDTC143XE-7-F Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | Dual NPN |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 150 mA |
| Gain Bandwidth Product (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 – 300 (typical) |
| Package Type | SOT-363 (SC-70) |
| Operating Temperature Range | -55??C to +150??C |
| Transition Frequency | Up to 100 MHz |
| Power Dissipation | 300 mW |
DDTC143XE-7-F Key Features
- Dual NPN transistor configuration: Enables compact circuit design by integrating two transistors in a single package, reducing board space and assembly complexity.
- High collector-emitter voltage (80 V): Supports applications requiring moderate voltage handling, enhancing versatility in switching and amplification roles.
- Wide operating temperature range: Ensures reliable performance from -55??C up to +150??C, suitable for harsh industrial environments.
- Fast switching speed with high transition frequency: Ideal for high-frequency signal processing and switching applications, improving overall circuit efficiency.
DDTC143XE-7-F Advantages vs Typical Alternatives
This transistor offers superior integration by combining two NPN devices in a single compact SOT-363 package, reducing board footprint compared to separate discrete transistors. Its enhanced gain and 80 V voltage rating provide a balance between power handling and efficiency, outperforming many low-voltage alternatives. The wide temperature range and robust power dissipation rating contribute to enhanced reliability over typical single-transistor options, making it an optimal choice for industrial and consumer electronics.
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Typical Applications
- Signal amplification and switching in portable electronic devices, where compact size and power efficiency are critical for battery-powered operation.
- High-frequency switching circuits requiring fast response and stable gain across temperature variations.
- Industrial control systems needing robust transistors that operate reliably under wide temperature ranges and moderate voltages.
- Consumer electronics such as audio amplifiers and interface drivers, where low noise and stable performance are essential.
DDTC143XE-7-F Brand Info
The DDTC143XE-7-F is offered by a leading semiconductor manufacturer known for providing reliable and high-quality discrete components tailored for industrial and consumer applications. This model exemplifies the brand??s commitment to delivering robust transistor solutions with consistent electrical characteristics and long-term operational stability. The product supports seamless integration into diverse electronic designs, backed by comprehensive technical documentation and global distribution networks.
FAQ
What is the collector current rating for this transistor?
The maximum collector current for this dual NPN transistor is 150 mA. This rating ensures the device can handle moderate current loads suitable for signal amplification and switching without thermal stress.
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Can the DDTC143XE-7-F operate in high-temperature environments?
Yes, the device is rated for operation from -55??C up to +150??C, making it well-suited for harsh industrial settings and applications where temperature extremes are common.
What package type does this transistor use and how does it benefit design?
It is housed in a SOT-363 (SC-70) small-outline package. This compact form factor reduces board space requirements and simplifies assembly, beneficial for miniaturized electronic designs.
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Is the device suitable for high-frequency applications?
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