DDTC125TE-7-F Overview
The DDTC125TE-7-F is a high-performance dual NPN transistor designed for switching and amplification duties in industrial and consumer electronics. Featuring matched transistor pairs with complementary characteristics, it supports efficient signal processing and low noise operation. Its compact SOT-363 package facilitates high-density PCB layouts, making it suitable for automated manufacturing environments. This device delivers reliable performance across a wide temperature range and is optimized for low power consumption, supporting robust designs. For detailed product information and sourcing, visit IC Manufacturer.
DDTC125TE-7-F Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | Dual NPN |
| Package | SOT-363 (SC-70 6-lead) |
| Collector-Emitter Voltage (VCEO) | 50 V |
| Collector Current (IC) | 150 mA |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 100 to 300 (depending on test conditions) |
| Transition Frequency | 100 MHz |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Power Dissipation (PD) | 350 mW |
DDTC125TE-7-F Key Features
- Dual Matched NPN Transistors: Enables precise differential amplification and improved signal integrity in analog circuits.
- Compact SOT-363 Package: Reduces PCB footprint, facilitating high-density circuit designs and automated assembly.
- High Gain Bandwidth (100 MHz): Supports high-frequency switching applications with minimal signal distortion.
- Wide Operating Temperature Range: Ensures stable performance in harsh industrial environments.
- Low Power Dissipation: Efficient operation reduces thermal management requirements and extends device reliability.
DDTC125TE-7-F Advantages vs Typical Alternatives
This dual NPN transistor offers superior integration and space savings compared to discrete transistor pairs, enhancing circuit miniaturization. Its balanced gain and bandwidth support accurate signal processing with reduced noise, outperforming common single-transistor options. The device’s low power dissipation and wide operating temperature range provide enhanced reliability and energy efficiency in demanding industrial applications.
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Typical Applications
- Differential amplifier stages in industrial signal processing, providing matched transistor pairs for accurate and low-noise amplification.
- Switching circuits requiring compact, high-speed transistors with reliable thermal performance.
- Low-level audio amplification where dual transistor matching improves fidelity and reduces distortion.
- High-density portable and handheld electronics benefiting from the small footprint and efficient power characteristics.
DDTC125TE-7-F Brand Info
The DDTC125TE-7-F is produced by a leading semiconductor manufacturer known for delivering reliable and high-quality transistor solutions tailored to industrial and consumer electronics markets. This product exemplifies the brand??s commitment to integrating advanced semiconductor processes with compact packaging technology, enabling engineers to develop efficient, space-saving designs without compromising performance or durability.
FAQ
What type of transistors are included in the DDTC125TE-7-F device?
The device contains two matched NPN bipolar junction transistors integrated within a single SOT-363 package. These transistors are designed to work as a pair for applications requiring symmetrical characteristics such as differential amplifiers or switching circuits.
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What is the maximum collector current supported by this dual transistor?
The maximum continuous collector current for each transistor within this device is rated at 150 milliamps, making it suitable for moderate power switching and amplification tasks in various electronic circuits.
How does the package type benefit circuit design?
The SOT-363 package offers a compact footprint with six leads, allowing for significant PCB space savings. This small outline facilitates high-density circuit board layouts and supports automated surface-mount assembly processes, improving manufacturing efficiency.
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What operating temperature range can the device endure?
This transistor pair is designed to operate reliably over a temperature range from -55 ??C up to +150 ??C, enabling its use in industrial environments where temperature extremes are common.




