DDTC123TUA-7-F Overview
The DDTC123TUA-7-F is a high-performance dual NPN transistor designed for industrial and consumer electronic applications requiring efficient signal amplification and switching. Featuring a complementary transistor pair with matched characteristics, it delivers reliable gain and low noise operation. This device supports high-frequency operation with a transition frequency (fT) suitable for RF and analog circuits. Its compact SOT-363 package enables space-saving PCB layouts and improved thermal dissipation. Ideal for designers seeking robust, consistent transistor performance, the DDTC123TUA-7-F is a versatile solution from IC Manufacturer.
DDTC123TUA-7-F Technical Specifications
Parameter | Value |
---|---|
Transistor Type | Dual NPN |
Package | SOT-363 (SC-70 6-pin) |
Collector-Emitter Voltage (Vceo) | 50 V |
Collector Current (Ic) | 100 mA |
Transition Frequency (fT) | 250 MHz (typical) |
Gain Bandwidth Product | 250 MHz (typical) |
DC Current Gain (hFE) | 100 to 300 |
Operating Temperature Range | -55??C to +150??C |
Power Dissipation (Pd) | 300 mW |
DDTC123TUA-7-F Key Features
- Matched Dual Transistor Pair: Ensures consistent gain and linearity, critical for differential amplifier circuits and analog signal processing.
- High Transition Frequency: Supports operation up to 250 MHz, enabling use in RF applications and high-speed switching.
- Compact SOT-363 Package: Saves PCB space and improves thermal management in dense circuit designs.
- Wide Operating Temperature Range: Suitable for demanding industrial environments with reliable performance from -55??C to +150??C.
DDTC123TUA-7-F Advantages vs Typical Alternatives
This transistor provides superior integration with its dual matched NPN configuration within a compact footprint, offering higher frequency response and consistent gain compared to discrete alternatives. Its robust voltage and current ratings, combined with excellent thermal characteristics, make it more reliable for long-term operation in industrial and RF circuits. These factors result in improved circuit efficiency and reduced design complexity.
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Typical Applications
- High-frequency amplifiers and RF front-end circuits where matched transistor pairs improve signal fidelity and gain stability.
- Analog signal processing circuits such as differential amplifiers and active filters requiring balanced transistor characteristics.
- Switching circuits in portable and space-constrained devices benefiting from the small SOT-363 package.
- General-purpose low noise amplification in communication equipment and consumer electronics.
DDTC123TUA-7-F Brand Info
Produced by a leading semiconductor manufacturer, this transistor model exemplifies the company??s commitment to quality and performance in discrete semiconductor components. The DDTC123TUA-7-F is part of a family of matched dual transistors designed to meet stringent industrial standards. The brand focuses on delivering reliable, high-frequency, and thermally stable components optimized for compact, high-density electronic designs.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current rating for this transistor is 100 mA, which defines the highest continuous current the device can handle without damage under specified operating conditions.
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Can this transistor be used in RF applications?
Yes, with a transition frequency of approximately 250 MHz, this dual transistor is suitable for many RF applications including amplifiers and signal processing circuits that operate in the VHF and lower UHF bands.
What package type does this transistor use and why is it beneficial?
The transistor is housed in a SOT-363 package, a compact 6-pin surface-mount package that saves PCB space and improves thermal dissipation, which is beneficial for high-density circuit designs and improved reliability.
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What is the operating temperature range of this device?
This device operates reliably over a wide temperature range from -55??C to +150??C, making it suitable for harsh industrial environments and applications requiring thermal stability.