DDTC123EUA-7-F Overview
The DDTC123EUA-7-F is a high-performance dual NPN transistor designed for efficient switching and amplification in industrial and consumer electronics. Featuring low saturation voltage and high current gain, this device offers robust operation in power management, signal amplification, and switching applications. Its compact SOT-23 package ensures easy PCB integration and thermal efficiency. Engineered for reliable performance under demanding conditions, the DDTC123EUA-7-F enables engineers to optimize circuit designs for enhanced power efficiency and signal integrity. For detailed technical support and purchasing, visit IC Manufacturer.
DDTC123EUA-7-F Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | Dual NPN |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 150 mA |
| Power Dissipation (Ptot) | 350 mW |
| DC Current Gain (hFE) | 100 to 300 |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | SOT-23 |
| Operating Temperature Range | -55??C to +150??C |
| Saturation Voltage (VCE(sat)) | 0.2 V (max) |
DDTC123EUA-7-F Key Features
- Dual NPN transistor configuration enables compact circuit designs by integrating two transistors in a single SOT-23 package, reducing PCB space and component count.
- High DC current gain (hFE) of up to 300 ensures efficient amplification and switching, improving overall circuit sensitivity and performance.
- Low collector-emitter saturation voltage minimizes power loss during switching, enhancing energy efficiency in power management applications.
- Wide operating temperature range from -55??C to +150??C supports reliable function in harsh industrial environments.
- Compact SOT-23 package offers excellent thermal characteristics and easy automated assembly, promoting integration into high-density circuit boards.
DDTC123EUA-7-F Advantages vs Typical Alternatives
This transistor stands out with its low saturation voltage and high current gain, delivering superior switching efficiency and signal amplification compared to standard single-transistor devices. Its dual configuration in a compact package reduces board space and component count, while the extended temperature rating ensures reliable operation in demanding industrial settings, making it a preferred choice for engineers seeking balance between power, size, and durability.
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Typical Applications
- Signal amplification in analog circuits requiring precise gain control with minimal power loss, such as audio preamplifiers or sensor interfacing.
- Switching elements in low-power DC-DC converters and power management modules within portable and embedded systems.
- General-purpose switching in industrial control systems and automation equipment where reliable transistor operation is critical.
- Driver stages for relays, LEDs, and small motors in consumer electronics and instrumentation applications.
DDTC123EUA-7-F Brand Info
The DDTC123EUA-7-F is manufactured by a leading semiconductor company known for high-quality analog and discrete components. This transistor is part of their extensive portfolio designed to provide engineers with reliable, efficient, and compact solutions for signal processing and power control. The brand emphasizes stringent quality control and robust performance to meet the demands of industrial and consumer electronics markets worldwide.
FAQ
What is the maximum collector current rating of the DDTC123EUA-7-F?
The maximum collector current for this dual NPN transistor is specified at 150 mA, making it suitable for low-power switching and amplification tasks in various electronic circuits.
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Can the DDTC123EUA-7-F operate in high-temperature environments?
Yes, the device is rated for an operating temperature range from -55??C up to +150??C, ensuring stable performance even in harsh industrial conditions.




