DDTC123EE-7-F Overview
The DDTC123EE-7-F is a high-performance transistor designed for industrial and commercial electronic applications requiring reliable switching and amplification. This device offers robust electrical characteristics, including a maximum collector current of 150mA and a voltage rating suitable for medium-power circuits. Its compact SOT-23 package supports efficient PCB integration, minimizing space while ensuring thermal stability. Engineered for precision and durability, this transistor is ideal for engineers and sourcing specialists focused on optimizing power management and signal control in embedded systems. For comprehensive details and procurement, visit IC Manufacturer.
DDTC123EE-7-F Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector Current (IC) | 150 mA (continuous) |
| Power Dissipation (PD) | 350 mW |
| Current Gain (hFE) | 100 to 300 (at IC = 10 mA) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | SOT-23 Surface Mount |
| Operating Temperature Range | -55??C to +150??C |
DDTC123EE-7-F Key Features
- High Current Gain: Provides excellent amplification efficiency, enabling lower input drive currents and improved overall circuit performance.
- Compact SOT-23 Package: Facilitates high-density PCB layouts, reducing board space while maintaining reliable thermal management.
- Wide Operating Temperature Range: Ensures stable operation in harsh industrial environments, enhancing device reliability and longevity.
- Fast Transition Frequency: Supports high-speed switching applications, crucial for signal processing and communication circuits.
DDTC123EE-7-F Advantages vs Typical Alternatives
This transistor stands out due to its balance of moderate power handling and high gain, making it more efficient than general-purpose BJTs in similar voltage classes. Its SOT-23 packaging offers better integration for space-constrained designs, while its extended temperature range provides superior reliability over alternatives that may fail under extreme conditions. The device??s consistent electrical parameters simplify design and sourcing processes for engineers.
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Typical Applications
- Switching circuits in industrial control systems, where reliable, fast transistor response is critical for managing power loads and signal regulation.
- Amplification stages in communication devices requiring stable gain and low noise performance.
- Signal processing modules in embedded systems, enhancing overall device responsiveness and accuracy.
- General-purpose low-power switching tasks in consumer electronics with demanding space and thermal constraints.
DDTC123EE-7-F Brand Info
The DDTC123EE-7-F is part of a well-established product line from a leading IC Manufacturer known for quality and innovation in semiconductor components. This transistor is engineered to meet rigorous industrial standards, offering dependable performance and seamless integration across diverse electronic designs. Its consistent manufacturing quality ensures dependable sourcing for OEMs and contract manufacturers focused on robust power and signal solutions.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this device is 150 mA. This rating ensures it can handle moderate load conditions typical in switching and amplification applications without compromising reliability.
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Can the transistor operate at high temperatures?
Yes, it supports an operating temperature range from -55??C up to +150??C, making it suitable for industrial environments and applications exposed to wide temperature variations.
What package type does the device come in?
The transistor is housed in a SOT-23 surface mount package, which is compact and optimized for automated PCB assembly and efficient thermal dissipation in dense circuit layouts.
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Is this transistor suitable for high-frequency switching?
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