DDTC123ECA-7-F Overview
The DDTC123ECA-7-F is a high-performance semiconductor device designed for precision switching and amplification in industrial and consumer electronics. Engineered to deliver reliable operation within a broad temperature range, this component supports efficient power management and signal integrity. Its optimized electrical characteristics enable seamless integration in complex circuits, ensuring stability and minimal power loss. Ideal for engineers and sourcing specialists, the device balances robust construction with precise control parameters. For detailed manufacturing information, visit IC Manufacturer.
DDTC123ECA-7-F Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | NPN Transistor |
| Collector-Emitter Voltage (VCEO) | 45 V |
| Collector Current (IC) | 150 mA |
| Gain Bandwidth Product (fT) | 100 MHz |
| Power Dissipation (Ptot) | 350 mW |
| Transition Frequency | 100 MHz |
| Junction Temperature Range | -55??C to +150??C |
| Package Type | SOT-23 Surface Mount |
| DC Current Gain (hFE) | 100 to 300 |
DDTC123ECA-7-F Key Features
- High Current Gain: Provides amplification with a gain range of 100 to 300, allowing for efficient signal boosting in low-power applications.
- Wide Voltage Handling: Supports up to 45 V collector-emitter voltage ensuring compatibility with diverse industrial power levels.
- Compact SOT-23 Package: Facilitates space-saving PCB designs and easy automated assembly, improving manufacturing efficiency.
- Thermal Stability: Operates reliably across a -55??C to +150??C junction temperature range, suitable for harsh environments.
DDTC123ECA-7-F Advantages vs Typical Alternatives
This transistor offers superior current gain and voltage handling compared to typical low-power NPN transistors. Its compact SOT-23 package ensures easier integration into tight circuit layouts. The wide operating temperature range enhances reliability in industrial settings. These features collectively provide engineers with a device that balances performance and durability, supporting efficient power management and signal control without compromising on size or thermal resilience.
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Typical Applications
- Switching and amplification in low-voltage control circuits, ideal for industrial automation requiring precise signal handling and power efficiency in compact layouts.
- Signal amplification in consumer electronic devices, enhancing audio and sensor input stages.
- Power regulation modules where stable transistor operation under varying thermal conditions is critical.
- General-purpose switching in embedded systems and IoT devices, benefiting from the small form factor and reliable electrical characteristics.
DDTC123ECA-7-F Brand Info
The DDTC123ECA-7-F is part of a trusted product line from a well-established manufacturer specializing in semiconductor components for industrial and consumer applications. This device reflects the brand??s commitment to quality, offering engineers a robust solution designed for high reliability and consistent performance. The product??s design emphasizes ease of integration and long-term operational stability, aligning with the brand??s focus on innovative, industry-grade electronic components.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for the DDTC123ECA-7-F is 150 mA, enabling it to handle moderate current loads typical in signal amplification and switching applications.
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Can this device operate in high-temperature environments?
Yes, it is rated for junction temperatures ranging from -55??C to +150??C, making it suitable for use in environments with wide temperature variations, including industrial settings.
What package type does this transistor use?
This device comes in a SOT-23 surface mount package, which is compact and supports automated PCB assembly processes, ideal for space-constrained designs.
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How does the gain bandwidth product affect performance?
The gain bandwidth product of 100 MHz allows the transistor to amplify signals effectively at higher frequencies, making it suitable for fast switching and RF applications within its operational limits.





