DDTC115TE-7-F MOSFET Transistor – N-Channel, TO-220 Package

DDTC115TE-7-F Overview

The DDTC115TE-7-F is a high-performance dual NPN transistor designed for industrial and automotive applications requiring reliable switching and amplification. Featuring a complementary transistor pair with matched electrical characteristics, it provides enhanced linearity and low noise operation. Packaged in a compact SOT-363 form factor, this device supports efficient PCB layout and thermal management. Its robust design ensures stable operation across a wide temperature range, making it suitable for signal processing, driver circuits, and general-purpose amplification. For detailed specifications and procurement, visit IC Manufacturer.

DDTC115TE-7-F Technical Specifications

DDTC115TE-7-F Key Features

• Dual NPN transistors paired in a single compact package, enabling space-saving circuit designs with consistent matched characteristics.
• High gain bandwidth product of 100 MHz ensures fast switching and high-frequency amplification, critical for signal processing applications.
• Wide operating temperature range from -55??C to +150??C, supporting robust performance in harsh industrial and automotive environments.
• Low power dissipation of 350 mW reduces thermal stress and improves reliability in densely packed electronic assemblies.

DDTC115TE-7-F Advantages vs Typical Alternatives

This dual NPN transistor device offers superior gain uniformity and frequency response compared to typical discrete transistors, enhancing circuit accuracy and sensitivity. Its integrated dual transistor configuration reduces PCB footprint and simplifies design, while the robust SOT-363 package ensures reliable operation under elevated temperatures and power loads. These factors collectively deliver enhanced efficiency and system reliability versus conventional single-transistor alternatives.

Typical Applications

• Signal amplification and switching in industrial control systems where stable gain and fast response time are essential for reliable operation.
• Driver stages in automotive electronics requiring matched transistor pairs for symmetrical switching performance.
• General-purpose low noise amplification in consumer and communication devices where compact size and thermal efficiency matter.
• Analog signal processing circuits benefiting from the device??s high gain bandwidth and thermal stability.

DDTC115TE-7-F Brand Info

The DDTC115TE-7-F is a precision dual NPN transistor product from a leading semiconductor manufacturer specializing in high-reliability discrete components for industrial and automotive markets. Designed with strict quality controls and advanced fabrication processes, this transistor pair offers consistent electrical performance and rugged durability. The brand is recognized for delivering components that meet stringent industry standards, ensuring dependable operation in demanding environments.

FAQ

What is the maximum collector current rating for this dual transistor?

The maximum collector current for each transistor in the dual configuration is 150 mA. This rating ensures the device can handle moderate current loads typical in signal amplification and switching applications without degradation.

Can this device be used in high-frequency circuits?

Yes, with a gain bandwidth product of 100 MHz, this transistor pair is well-suited for high-frequency applications such as RF amplifiers and fast switching circuits, offering reliable performance at elevated frequencies.

What package does the DDTC115TE-7-F come in and why is it beneficial?

It is packaged in a SOT-363 small outline transistor package, which provides a compact footprint ideal for space-constrained PCB layouts. The package also facilitates efficient heat dissipation and mechanical stability.

What temperature range can the device operate in?

The device operates reliably over a wide temperature range from -55??C up to +150??C, making it suitable for harsh industrial and automotive environments where temperature extremes are common.