DDTC115TE-7 Dual Diode Transient Voltage Suppressor – TO-220 Package

DDTC115TE-7 Overview

The DDTC115TE-7 is a dual NPN transistor designed for high-performance switching and amplification applications. Featuring a complementary silicon planar epitaxial technology, this device offers excellent current gain and low saturation voltage, enabling efficient operation in industrial environments. Its TO-92 package ensures easy integration into various circuit designs while maintaining reliable thermal performance. Ideal for signal processing and driver stages, the transistor delivers consistent electrical characteristics across the specified temperature range. For detailed product sourcing and support, visit IC Manufacturer.

DDTC115TE-7 Technical Specifications

DDTC115TE-7 Key Features

• Dual NPN transistor configuration: Enables complementary switching and amplification in compact spaces, reducing board complexity.
• High current gain (h_FE): Provides efficient signal amplification with minimal input drive, improving overall circuit sensitivity.
• Low saturation voltage: Enhances power efficiency by minimizing voltage drop during switching, which reduces heat generation and extends component life.
• High transition frequency (100 MHz): Supports high-speed switching applications, suitable for signal processing and driver circuits.
• Robust voltage ratings: Collector-emitter and collector-base voltages up to 45 V and 50 V respectively allow operation in moderately high-voltage environments.
• Compact TO-92 package: Facilitates easy manual or automated PCB assembly while providing reliable thermal dissipation.

DDTC115TE-7 Advantages vs Typical Alternatives

This transistor offers superior current gain and switching speed compared to standard single-transistor devices, enabling more efficient signal amplification and lower power loss. Its dual-device integration reduces component count and board space. The robust voltage and current ratings ensure reliable operation under industrial conditions, providing a competitive edge in applications requiring dependable performance and compact design.

Typical Applications

• Signal amplification in low to medium power analog circuits, where dual transistor configuration simplifies design and improves performance.
• Switching stages in industrial control systems requiring reliable and fast transistor response.
• Driver circuits for relays and small motors, leveraging the device’s moderate current capacity and voltage ratings.
• General-purpose electronic applications in consumer and industrial equipment where compact packaging and efficient switching are needed.

DDTC115TE-7 Brand Info

The DDTC115TE-7 is part of a semiconductor product line specializing in discrete transistors optimized for industrial and commercial electronics. This device reflects the manufacturer??s commitment to quality and performance, offering engineers a reliable component with proven electrical characteristics. Designed with precision silicon planar epitaxial technology, it ensures consistent operation and long-term durability in demanding environments.

FAQ

What is the maximum collector current rating for the DDTC115TE-7?

The maximum collector current for this dual NPN transistor is 600 mA. This rating allows it to handle moderate current loads typical in signal amplification and switching applications without risk of damage or performance degradation.

Can the DDTC115TE-7 be used in high-frequency circuits?

Yes, the device features a typical transition frequency of 100 MHz, making it suitable for high-speed switching and signal processing tasks in radio frequency and other fast electronic applications.

What package type does the DDTC115TE-7 come in,

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