DDTC115GE-7 Overview
The DDTC115GE-7 is a high-performance transistor designed for robust industrial and consumer electronics applications. Engineered to deliver reliable switching and amplification, this device offers optimized electrical characteristics ensuring efficient operation under varying load conditions. Its enhanced gain and low noise figure support precision signal control, making it ideal for demanding circuits. The DDTC115GE-7??s compact package and thermal stability contribute to simplified integration and long-term durability. Sourced from IC Manufacturer, this transistor meets stringent quality standards for modern semiconductor components.
DDTC115GE-7 Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (Vce) | 45 V |
| Collector Current (Ic) | 100 mA |
| Power Dissipation (Pd) | 350 mW |
| Transition Frequency (fT) | 100 MHz |
| Gain Bandwidth Product (hFE) | 70 to 300 (depending on operating point) |
| Package Type | SOT-23 surface mount |
| Operating Temperature Range | -55??C to +150??C |
| Noise Figure | Low noise, suitable for analog signal amplification |
DDTC115GE-7 Key Features
- High Transition Frequency: Enables fast switching and high-frequency amplification, critical for RF and signal processing applications.
- Wide Operating Voltage Range: Supports up to 45 V collector-emitter voltage, allowing use in a variety of power and control circuits.
- Compact SOT-23 Package: Facilitates space-saving PCB layouts and automated assembly for mass production.
- Robust Thermal Performance: Ensures stable operation across -55??C to +150??C, enhancing reliability in harsh environments.
DDTC115GE-7 Advantages vs Typical Alternatives
This transistor offers a strong combination of high gain and low noise figure compared to standard general-purpose BJTs. Its ability to maintain performance across a wide temperature range and its compact SOT-23 package provide engineers with a reliable, space-efficient solution. These advantages translate into improved signal integrity and easier integration in compact, high-frequency designs.
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Typical Applications
- Low noise amplifier stages in RF communication devices, where precise signal amplification and minimal distortion are essential.
- Switching elements in signal processing circuits requiring fast response times and stable gain.
- Driver circuits for small motors or relays in industrial automation systems, benefiting from reliable current handling.
- General purpose amplification in consumer electronics such as audio equipment and portable devices.
DDTC115GE-7 Brand Info
The DDTC115GE-7 is part of a well-established transistor series offered by IC Manufacturer, a trusted supplier in the semiconductor industry. This product line is recognized for balancing performance and cost-efficiency, making it a preferred choice for engineers requiring dependable discrete components. The DDTC115GE-7 underscores the brand??s commitment to delivering high-quality, application-ready transistors suitable for complex industrial and commercial electronics.
FAQ
What is the maximum collector current for the DDTC115GE-7?
The maximum collector current rating for this transistor is 100 mA, which defines the maximum continuous current the device can handle safely during operation without damage.
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Can the DDTC115GE-7 operate in high-frequency circuits?
Yes, the transistor features a transition frequency (fT) of 100 MHz, making it well-suited for high-frequency applications such as RF amplification and fast switching.
What package does the DDTC115GE-7 come in, and why is it important?
This device is supplied in a SOT-23 surface-mount package, which is important for compact PCB designs and supports automated assembly processes, reducing manufacturing complexity and cost.
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What temperature range is supported by the DDTC115GE-7?
The transistor operates reliably from -55??C up to +150??C, allowing it to function in a wide range of industrial and environmental conditions without performance degradation.
