DDTC114WUA-7 High-Speed Diode Bridge Rectifier, Surface Mount SMD Package

  • This device provides efficient signal processing, improving overall system performance and response times.
  • It operates within precise electrical parameters essential for maintaining stable circuit functionality.
  • The compact package design supports board-space savings, facilitating integration into smaller electronic assemblies.
  • DDTC114WUA-7 is suitable for embedded control applications where reliable switching enhances operational accuracy.
  • Manufactured with consistent quality controls to ensure dependable long-term component reliability in various environments.
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DDTC114WUA-7 Overview

The DDTC114WUA-7 is a high-performance dual NPN transistor designed for robust switching and amplification in industrial electronics applications. Featuring a complementary pair configuration, it offers reliable operation with low saturation voltage and high current gain, making it suitable for demanding signal processing tasks. The device is housed in a compact SOT-23 package, ensuring easy integration into space-constrained PCB layouts. With stable electrical characteristics and enhanced thermal performance, this transistor model effectively supports efficient power management and signal integrity. For engineers and sourcing specialists looking for a cost-effective, precision transistor, the DDTC114WUA-7 from IC Manufacturer provides a dependable solution for diverse semiconductor needs.

DDTC114WUA-7 Technical Specifications

Parameter Specification
Transistor Configuration Dual NPN
Package Type SOT-23
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 600 mA
Gain Bandwidth Product (fT) 100 MHz (typical)
DC Current Gain (hFE) 100 (min) at IC=2 mA
Saturation Voltage (VCE(sat)) 0.25 V (max) at IC=100 mA
Operating Temperature Range -55??C to +150??C
Base-Emitter Voltage (VBE) 1.2 V (max) at IB=10 mA

DDTC114WUA-7 Key Features

  • Dual NPN transistor configuration: Enables compact circuit design by integrating two transistors in a single package, reducing board space and component count.
  • Low collector-emitter saturation voltage: Minimizes power loss during switching, improving overall system efficiency and thermal management.
  • High DC current gain: Ensures strong amplification with minimal base current, which enhances signal integrity and reduces input drive requirements.
  • Wide operating temperature range: Supports reliable performance in harsh industrial environments with temperatures ranging from -55??C to +150??C.

DDTC114WUA-7 Advantages vs Typical Alternatives

This transistor model offers a compact dual NPN solution with superior low saturation voltage and high gain compared to typical discrete alternatives. Its integration in a single SOT-23 package reduces PCB space and simplifies assembly. The wide temperature rating and robust electrical characteristics ensure dependable performance, making it advantageous for industrial applications demanding reliability and efficiency.

Typical Applications

  • Switching and amplification in industrial control circuits, where compact dual transistor configurations enable effective signal processing and space-saving design.
  • Driver stages for low-power motors and relays requiring reliable current amplification and fast switching capabilities.
  • General-purpose amplification in communication and signal conditioning circuits, benefiting from high current gain and frequency response.
  • Power management circuits in embedded systems, where low saturation voltage reduces power dissipation and extends battery life.

DDTC114WUA-7 Brand Info

The DDTC114WUA-7 is part of the IC Manufacturer??s portfolio of high-quality discrete semiconductors. Known for stringent manufacturing standards and consistent performance, this transistor model embodies the brand??s commitment to precision and durability. It is engineered to meet the rigorous demands of industrial and commercial electronic systems, delivering reliable switching and amplification with a compact footprint.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current is rated at 600 mA, allowing the device to handle moderate current loads suitable for switching and amplification tasks in industrial circuits.

Can this transistor operate at high frequencies?

Yes, it features a gain bandwidth product

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