DDTC113ZE-7-F NPN Transistor Switch – TO-92 Package | High Performance

  • This device provides efficient processing capabilities, supporting smooth performance in embedded systems.
  • Equipped with a key specification that enhances operational speed, it ensures timely data handling for critical tasks.
  • The compact package type offers board-space savings, enabling integration into designs with limited room.
  • Ideal for industrial control applications, it facilitates reliable automation by maintaining consistent output.
  • Manufactured under strict quality controls, it delivers dependable operation in demanding environments.
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DDTC113ZE-7-F Overview

The DDTC113ZE-7-F is a high-performance dual NPN transistor designed for switching and amplification applications in industrial electronics. Featuring a compact SOT-23 package, this device delivers reliable operation with low saturation voltage and high current gain, ensuring efficient signal control and power management. It supports fast switching speeds and offers robust thermal stability, making it ideal for use in signal amplification, driver stages, and general-purpose switching circuits. Engineers and sourcing specialists will benefit from its consistent electrical characteristics and ease of integration into various electronic designs. For detailed product information, visit IC Manufacturer.

DDTC113ZE-7-F Technical Specifications

Parameter Specification
Transistor Type Dual NPN
Package SOT-23
Collector-Emitter Voltage (VCEO) 45 V
Collector Current (IC) 600 mA
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 100?C300
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25 V (typical at IC=100 mA)
Operating Temperature Range -55??C to +150??C
Transition Frequency 100 MHz
Package Dimensions 2.9 mm ?? 1.3 mm ?? 1.1 mm (SOT-23)

DDTC113ZE-7-F Key Features

  • Dual NPN configuration: Enables compact circuit design by integrating two transistors in a single SOT-23 package, reducing board space and simplifying layouts.
  • Low saturation voltage: Minimizes power loss during switching operations, improving overall system efficiency and reducing heat dissipation.
  • High current gain (hFE): Provides strong amplification capabilities, ensuring reliable signal strength in driver and amplifier circuits.
  • Wide operating temperature range: Supports stable performance in harsh industrial environments, enhancing device reliability and lifespan.

DDTC113ZE-7-F Advantages vs Typical Alternatives

This transistor offers an optimal balance of low saturation voltage and high current gain, outperforming many standard dual transistors in efficiency and thermal handling. Its compact SOT-23 package enables space-saving PCB designs while maintaining robust electrical characteristics. Compared to typical alternatives, it provides reliable switching speeds and stable operation across a wide temperature range, making it a superior choice for industrial and general-purpose electronics requiring dependable transistor performance.

Typical Applications

  • Signal amplification circuits where low noise and high gain are critical for maintaining signal integrity in industrial control systems.
  • Driver stages for small motors and relays, leveraging its high current capability and low saturation voltage for efficient switching.
  • Switching circuits in power management modules, benefiting from fast switching speeds and stable operation under varied temperature conditions.
  • General-purpose electronic circuits requiring compact dual transistor solutions to optimize board layout and component count.

DDTC113ZE-7-F Brand Info

The DDTC113ZE-7-F transistor is offered by a leading semiconductor manufacturer known for delivering reliable, high-quality discrete components tailored for industrial electronics. This product exemplifies the brand??s commitment to precision engineering, consistent performance, and robust packaging suitable for demanding applications. The device is designed to meet rigorous quality standards, ensuring dependable operation in diverse environments and seamless integration within complex electronic systems.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 600 mA, allowing it to handle moderate load conditions in switching and amplification applications without compromising device reliability.

Can this device operate at high switching frequencies?

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