DDTC113TE-7-F NPN Transistor – Switching Amplifier – TO-92 Package

DDTC113TE-7-F Overview

The DDTC113TE-7-F is a high-performance dual NPN transistor designed for industrial and consumer electronics applications requiring reliable switching and amplification. Featuring a low noise design and robust electrical characteristics, this transistor operates efficiently within a wide voltage and current range. Its complementary packaging and thermal stability make it suitable for applications where precision and durability are paramount. Engineers and sourcing specialists will find this component optimal for integration in signal processing, amplification circuits, and switching devices. For detailed information and procurement, visit IC Manufacturer.

DDTC113TE-7-F Technical Specifications

DDTC113TE-7-F Key Features

• Dual NPN configuration: Enables compact design by integrating two transistors in one package, reducing board space and simplifying circuit layout.
• High current gain (h_FE): Ensures efficient signal amplification, improving overall circuit performance in low-noise applications.
• Wide transition frequency (100 MHz): Supports high-speed switching and RF amplification, beneficial for communication and signal processing systems.
• Compact SOT-363 package: Facilitates surface-mount assembly, enhancing manufacturing efficiency and mechanical reliability.

DDTC113TE-7-F Advantages vs Typical Alternatives

This device offers superior integration with its dual transistor design, minimizing PCB footprint compared to single-transistor alternatives. Its high current gain and transition frequency enable more precise and faster switching, while the low power dissipation and extended temperature range ensure reliable operation in harsh industrial environments. These advantages make it a preferred choice for engineers seeking performance and durability in compact packages.

Typical Applications

• Signal amplification in audio and RF circuits, where low noise and high gain are critical for maintaining signal integrity and clarity.
• Switching applications in low-voltage control circuits requiring fast response and reliable operation.
• General-purpose amplification tasks in consumer electronics such as portable devices and communication equipment.
• Integrated circuits requiring complementary transistor pairs for push-pull amplifier configurations or buffer stages.

DDTC113TE-7-F Brand Info

The DDTC113TE-7-F is manufactured by a leading semiconductor supplier known for precision analog components tailored to industrial and consumer markets. This product exemplifies the brand??s commitment to quality, offering robust electrical characteristics and package reliability. Designed to meet stringent industry standards, it supports engineers with consistent performance and supply chain stability for large-scale production and prototype development.

FAQ

What are the primary electrical limits of the DDTC113TE-7-F transistor?

The transistor supports a maximum collector-emitter voltage of 40 V and a collector current up to 150 mA, with a total power dissipation of 300 mW. These limits ensure safe operation within typical low-power amplification and switching environments.

How does the dual transistor configuration benefit circuit design?

Integrating two NPN transistors within a single package allows for more compact circuit layouts, reduces component count, and improves matching characteristics between transistors. This simplifies design efforts in differential amplifiers and push-pull stages.

What type of packaging does this transistor use, and why is it important?

The device comes in a SOT-363 (SC-70) 6