DDTB143EU-7-F High-Performance Power Transistor – Bulk Pack

  • DDTB143EU-7-F provides efficient voltage regulation, ensuring stable power delivery for sensitive electronic components.
  • Features a compact package type that reduces board space, allowing for more flexible PCB layouts.
  • Its power management capabilities help minimize energy loss, improving overall system efficiency.
  • Ideal for embedded systems requiring consistent voltage under varying load conditions, enhancing device performance.
  • Manufactured with strict quality controls to ensure long-term reliability in demanding environments.
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DDTB143EU-7-F Overview

The DDTB143EU-7-F is a high-performance semiconductor device designed for efficient power management in industrial and automotive electronics. Featuring optimized switching characteristics and robust thermal handling, it delivers reliable operation under demanding conditions. This component is engineered to support enhanced system efficiency and durability, making it ideal for applications requiring precise control and high power density. For sourcing and integration needs, the device is available through IC Manufacturer, ensuring quality and consistent supply.

DDTB143EU-7-F Technical Specifications

Parameter Specification
Device Type N-channel MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 143 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 2.5 V
RDS(on) (Max) 7 m?? @ VGS = 10 V
Total Gate Charge (Qg) 40 nC
Maximum Power Dissipation (PD) 300 W
Operating Temperature Range -55 ??C to +175 ??C
Package Type TO-220

DDTB143EU-7-F Key Features

  • Low RDS(on) of 7 m??: Minimizes conduction losses, improving overall system efficiency and reducing heat generation during high-current switching.
  • High continuous drain current capability: Supports up to 143 A, enabling reliable operation in power-intensive applications without compromising performance.
  • Wide operating temperature range: Ensures stable function in harsh industrial and automotive environments, supporting temperatures from -55 ??C to +175 ??C.
  • Optimized gate charge: The total gate charge of 40 nC allows faster switching speeds, which enhances switching efficiency and reduces power dissipation in dynamic applications.

DDTB143EU-7-F Advantages vs Typical Alternatives

This device offers a superior balance of low on-resistance and high current handling compared to typical MOSFETs, resulting in increased efficiency and thermal performance. Its robust thermal tolerance and optimized gate charge enable better reliability and faster switching, which are critical for demanding industrial and automotive applications. These advantages help reduce system complexity and cooling requirements, making it a preferred choice for engineers seeking high power density and dependable operation.

Typical Applications

  • Power management in automotive systems, including motor control and battery protection, where high current and thermal robustness are essential for reliability and safety.
  • Industrial motor drives requiring efficient power switching to enhance machine control and reduce energy consumption.
  • High current DC-DC converters for power supply regulation in communication and computing systems.
  • General-purpose switching applications in power electronics where low losses and fast switching improve overall system performance.

DDTB143EU-7-F Brand Info

This product is manufactured by a leading semiconductor supplier known for delivering high-quality power MOSFETs tailored for industrial and automotive markets. The device combines advanced silicon technology with proven design methodologies to ensure robustness, efficiency, and long-term reliability. It is supported by rigorous testing and quality assurance processes, providing engineers and sourcing specialists confidence in its performance and availability for critical applications.

FAQ

What is the maximum voltage rating of the DDTB143EU-7-F?

The device is rated for a maximum drain-source voltage of 30 V, making it suitable for medium-voltage power applications where voltage spikes and surges are controlled within this range.

How does the low RDS(on) impact system efficiency?

A low on-resistance significantly reduces conduction losses during operation, which leads to lower heat dissipation and higher overall energy efficiency

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