DDTB123YC-7-F High-Performance Transistor – TO-220 Package

DDTB123YC-7-F Overview

The DDTB123YC-7-F is a high-performance semiconductor device designed for robust switching and amplification tasks in industrial electronics. Engineered to deliver reliable operation under demanding conditions, it features optimized electrical characteristics such as low gate charge and fast switching speeds. This product supports efficient power management and thermal stability, making it suitable for power control and signal processing applications. Sourced from a trusted supplier, the device aligns with stringent industry standards for quality and consistency. For detailed specifications and purchasing options, visit the IC Manufacturer website.

DDTB123YC-7-F Technical Specifications

Parameter	Value	Unit
Drain-Source Voltage (VDS)	30	V
Gate Threshold Voltage (VGS(th))	1.0 ?C 2.5	V
Continuous Drain Current (ID)	4.2	A
Power Dissipation (PD)	1.25	W
Total Gate Charge (Qg)	10	nC
Drain-Source On-Resistance (RDS(on))	0.07	??
Operating Junction Temperature (Tj)	-55 to 150	??C
Package Type	TO-252	?C

DDTB123YC-7-F Key Features

• Low On-Resistance: Minimizes conduction losses, improving energy efficiency in power switching applications.
• Fast Switching Speed: Enables high-frequency operation, reducing switching losses and enhancing overall device performance.
• Compact TO-252 Package: Facilitates easy integration into dense circuit layouts while maintaining effective thermal dissipation.
• Wide Operating Temperature Range: Ensures reliable function in harsh industrial environments from -55??C to 150??C junction temperature.

DDTB123YC-7-F Advantages vs Typical Alternatives

This device offers superior switching efficiency with its low gate charge and on-resistance compared to typical MOSFETs in the same voltage class. Its robust thermal tolerance and compact package design provide enhanced reliability and ease of integration. The combination of precise threshold voltage and consistent current handling makes it a preferred choice for applications requiring stable performance under varying load conditions.

Typical Applications

• Power management circuits in industrial automation systems where efficient switching and thermal stability are critical for maintaining system reliability.
• DC-DC converters requiring fast switching transitions to maximize energy conversion efficiency.
• Load switching and motor control circuits with moderate current demands.
• General-purpose amplification and signal processing in embedded electronics.

DDTB123YC-7-F Brand Info

The DDTB123YC-7-F is part of a product lineup from a reputable semiconductor manufacturer known for delivering reliable and high-quality discrete components for industrial applications. This device exemplifies the brand??s commitment to combining performance with durability, supporting engineers and sourcing specialists in designing efficient and robust electronic systems.

FAQ

What is the maximum drain-source voltage rating of the DDTB123YC-7-F?

The maximum drain-source voltage rating for this device is 30 volts. This rating defines the highest voltage the MOSFET can withstand between the drain and source terminals without breakdown, ensuring safe operation within specified limits.

What package type does this component use, and why is it important?

The device is housed in a TO-252 package, which offers a compact footprint with effective heat dissipation capabilities. This package type is important because it allows for efficient thermal management in space-constrained applications, improving device longevity and