DDTB123EC-7-F Overview
The DDTB123EC-7-F is a high-performance dual NPN transistor designed for switching and amplification applications in industrial and consumer electronics. Featuring a compact SOT-23 package, this device offers low saturation voltage and high current gain, ensuring efficient power handling and signal integrity. It operates reliably over a wide temperature range, making it suitable for various demanding environments. With robust electrical characteristics and proven manufacturing quality, the DDTB123EC-7-F provides engineers and sourcing specialists with a dependable solution for enhancing circuit performance. For more detailed information, visit IC Manufacturer.
DDTB123EC-7-F Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | Dual NPN |
| Package | SOT-23 |
| Collector-Emitter Voltage (VCEO) | 50 V |
| Collector Current (IC) | 150 mA |
| Power Dissipation (Ptot) | 350 mW |
| Current Gain (hFE) | 100 to 300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Input Capacitance (Cin) | 4 pF (typical) |
DDTB123EC-7-F Key Features
- Dual NPN Transistor Design: Enables compact circuit layouts by integrating two transistors in one package, reducing board space and assembly complexity.
- High Current Gain: Typical hFE values from 100 to 300 provide strong amplification, improving signal strength and switching efficiency.
- Low Saturation Voltage: Minimizes power loss during switching, enhancing energy efficiency and reducing thermal stress on components.
- Wide Operating Temperature Range: Suitable for harsh industrial environments, ensuring reliable performance from -55 ??C up to +150 ??C.
- Compact SOT-23 Package: Offers excellent thermal performance and easy surface-mount assembly, ideal for high-density PCB designs.
DDTB123EC-7-F Advantages vs Typical Alternatives
This transistor stands out due to its combination of low saturation voltage and high current gain, which together improve overall circuit efficiency and switching speed. Its compact SOT-23 package supports space-saving on PCBs compared to larger discrete transistors. The wide operating temperature range assures reliable function in industrial applications where alternatives may fail under thermal stress. Additionally, the dual transistor configuration reduces component count and enhances design integration.
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Typical Applications
- Signal amplification and switching in industrial control systems, benefiting from the high gain and robust voltage ratings for reliable operation.
- Consumer electronics requiring compact, efficient transistor solutions in power management circuits.
- Automotive electronics where temperature resilience and compact size are critical for embedded sensor and actuator drivers.
- General-purpose switching applications in communication devices and portable instrumentation.
DDTB123EC-7-F Brand Info
The DDTB123EC-7-F is a product from a leading semiconductor manufacturer known for precision and quality in transistor manufacturing. This device exemplifies the brand??s commitment to delivering reliable, high-performance components that meet demanding industrial and commercial requirements. Designed with strict quality control and advanced fabrication techniques, it offers engineers a trusted solution for efficient circuit design across a broad range of applications.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current is rated at 150 mA, making it suitable for low to moderate power switching and amplification tasks within industrial and consumer electronics.
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Can this transistor operate in high-temperature environments?
Yes, it supports an operating temperature range from -55 ??C to +
