DDTB114EC-7-F High-Performance Bluetooth Module with Embedded Antenna – Compact Package

DDTB114EC-7-F Overview

The DDTB114EC-7-F is a robust, high-performance semiconductor device designed for efficient power management in industrial and automotive applications. This transistor offers a balance of low on-resistance and high current handling capabilities, ensuring reliable operation in demanding environments. Its advanced packaging supports thermal dissipation and integration ease, making it ideal for power switching and amplification tasks. With precise electrical characteristics, it facilitates improved energy efficiency and system stability. Engineers and sourcing specialists seeking dependable, scalable solutions will find this component aligns with modern design requirements. For detailed specifications and sourcing, visit IC Manufacturer.

DDTB114EC-7-F Technical Specifications

DDTB114EC-7-F Key Features

• High Current Capacity: Supports continuous drain currents up to 114 A, enabling efficient handling of heavy load applications with minimal losses.
• Low On-Resistance: Featuring an R_DS(on) of 7 m?? at 10 V gate drive, it reduces conduction losses, improving overall system efficiency and thermal performance.
• Wide Temperature Range: Operates reliably from -55??C to +175??C, ensuring robust performance in harsh industrial and automotive environments.
• Fast Switching Speed: Low total gate charge expedites switching operations, enhancing power conversion efficiency in high-frequency circuits.

DDTB114EC-7-F Advantages vs Typical Alternatives

This MOSFET delivers superior current handling and lower on-resistance than many standard alternatives, resulting in enhanced power efficiency and thermal management. Its broader junction temperature range and optimized gate charge make it well-suited for demanding industrial and automotive applications where reliability and energy savings are critical. The TO-220 package also simplifies integration and cooling, offering a practical advantage over less thermally efficient packages.

Typical Applications

• Power management in industrial motor drives, where high current capability and low conduction loss improve energy efficiency and system reliability under variable load conditions.
• Automotive electronic control units (ECUs) requiring rugged, temperature-resilient transistors for stable operation in harsh environments.
• DC-DC converters and power supplies that benefit from fast switching and low gate charge to minimize switching losses and improve overall efficiency.
• Battery management systems in electric vehicles and renewable energy storage, leveraging the device’s high current capacity and thermal tolerance for safe, efficient operation.

DDTB114EC-7-F Brand Info

The DDTB114EC-7-F is part of a comprehensive product line engineered by IC Manufacturer to meet stringent industrial and automotive power semiconductor requirements. Known for precision, durability, and innovation, this brand offers components that integrate seamlessly into complex systems, delivering consistent performance and reliability. The DDTB114EC-7-F exemplifies the company??s commitment to quality and efficiency, providing engineers and sourcing teams with a reliable solution for high-current, low-loss switching applications.

FAQ

What is the maximum drain-source voltage for the DDTB114EC-7-F?

The maximum drain-source voltage (V_DS) for this device is 40 V. This rating defines the highest voltage the transistor can withstand between drain and source terminals without damage,