DDTA144WCA-7-F RF Power Amplifier Transistor | Surface-Mount Package

  • This device amplifies RF signals, enhancing communication clarity and system performance.
  • Operating frequency supports efficient signal transmission suitable for modern wireless applications.
  • Its compact package design enables easy integration and conserves valuable circuit board space.
  • Ideal for use in portable communication devices, improving range and signal strength in varied environments.
  • Manufactured under stringent quality controls to ensure consistent performance and long-term reliability.
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DDTA144WCA-7-F Overview

The DDTA144WCA-7-F is a high-performance, low-noise dual-gate MOSFET designed for demanding RF and microwave applications. Offering excellent gain, low noise figure, and high linearity, it is ideal for use in wireless communication systems, signal amplification, and low-level signal detection. This device supports operation over a broad frequency range, making it suitable for various industrial and commercial electronics projects. With its robust construction and reliable performance parameters, the DDTA144WCA-7-F ensures consistent functionality in challenging environments. For detailed product information and sourcing, visit IC Manufacturer.

DDTA144WCA-7-F Technical Specifications

Parameter Specification
Device Type Dual-Gate MOSFET
Frequency Range Up to 1.5 GHz
Noise Figure 1.2 dB (typical)
Gain (S21) 16 dB (typical)
Drain-Source Voltage (Vds) 12 V max
Gate-Source Voltage (Vgs) -2 V to 0 V
Operating Temperature Range -55??C to +125??C
Package Type SOT-343 Surface Mount
Input Capacitance (Ciss) 1.5 pF (typical)
Output Capacitance (Coss) 0.4 pF (typical)

DDTA144WCA-7-F Key Features

  • Low Noise Figure: Ensures minimal signal degradation, critical for sensitive RF front-end designs.
  • High Gain: Provides strong amplification at frequencies up to 1.5 GHz, improving signal strength and quality.
  • Dual-Gate Configuration: Enables enhanced gain control and linearity, beneficial for applications requiring precise signal modulation.
  • Wide Operating Temperature: Reliable performance from -55??C to +125??C supports use in harsh industrial environments.
  • Compact SOT-343 Package: Facilitates high-density PCB layouts and automated assembly, reducing manufacturing costs.
  • Low Input/Output Capacitance: Optimizes high-frequency response and reduces parasitic effects for improved signal integrity.
  • Robust Voltage Ratings: Supports up to 12 V drain-source voltage, allowing flexible power supply options without compromising reliability.

DDTA144WCA-7-F Advantages vs Typical Alternatives

This device offers a superior combination of low noise figure and high gain compared to typical MOSFETs in its class. Its dual-gate structure enhances linearity and gain control, which are critical for reducing distortion in RF applications. The wide operating temperature range and compact SOT-343 package increase integration flexibility and durability, making it a preferred choice for engineers seeking reliable, efficient amplification solutions in wireless and industrial systems.

Typical Applications

  • RF and microwave amplifiers in wireless communication systems, providing low-noise gain for improved signal reception and transmission quality.
  • Low-level signal detection circuits where precise amplification with minimal noise is essential for accurate measurements.
  • High-frequency mixers and oscillators in industrial and commercial RF equipment requiring stable, linear performance.
  • Front-end modules in radar and satellite communication systems benefiting from compact size and wide temperature tolerance.

DDTA144WCA-7-F Brand Info

The DDTA144WCA-7-F is manufactured by a leading semiconductor producer specializing in high-quality RF components. This product line is recognized for its rigorous quality standards, consistent performance, and comprehensive technical support. Designed to meet the strict demands of industrial and commercial RF applications, this dual-gate MOSFET exemplifies the brand??s commitment to innovation and reliability in semiconductor solutions.

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