DDTA144VE-7-F Overview
The DDTA144VE-7-F is a high-performance dual-gate N-channel MOSFET designed for RF amplification in industrial and communications applications. Offering a low noise figure and high gain, it ensures excellent signal integrity in sensitive RF front-end circuits. Its robust design supports operation at VHF and UHF frequencies, making it ideal for demanding environments. With a compact SOT-89 package and reliable thermal characteristics, this component provides engineers and sourcing specialists a dependable solution for enhancing system sensitivity and stability. For detailed technical support and sourcing, visit IC Manufacturer.
DDTA144VE-7-F Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Dual-Gate N-Channel MOSFET |
| Frequency Range | VHF/UHF (up to ~300 MHz) |
| Noise Figure | Typically 2.5 dB at 100 MHz |
| Gain (Voltage Gain) | Approximately 14 dB at 100 MHz |
| Drain-Source Voltage (Vds) | 12 V Maximum |
| Gate-Source Voltage (Vgs) | ??15 V Maximum |
| Package | SOT-89 Surface Mount |
| Operating Temperature Range | -55??C to +150??C |
| Input Capacitance (Ciss) | Approx. 3.5 pF |
DDTA144VE-7-F Key Features
- Dual-gate MOSFET architecture: Enables precise gain control and improved isolation, critical for RF amplification stages.
- Low noise figure: Minimizes signal degradation, enhancing receiver sensitivity in communication systems.
- Wide operating temperature range: Ensures reliability in harsh industrial environments and outdoor applications.
- Compact SOT-89 package: Facilitates easy PCB integration and efficient thermal dissipation for high-frequency operations.
DDTA144VE-7-F Advantages vs Typical Alternatives
This device offers superior noise performance and gain stability compared to typical single-gate MOSFETs, making it highly suitable for sensitive RF front-ends. Its dual-gate design provides enhanced control over signal amplification, improving linearity and reducing distortion. The combination of reliable thermal handling and compact packaging ensures robust operation in demanding industrial settings, outperforming many conventional discrete transistors in similar frequency ranges.
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Typical Applications
- RF front-end amplifiers in VHF/UHF communication devices, improving signal-to-noise ratio and reception quality in wireless systems.
- Low-noise amplifiers (LNAs) for industrial telemetry and remote sensing applications requiring stable gain and low distortion.
- Signal amplification stages in broadcast transmitters and receivers operating in the VHF/UHF bands.
- General-purpose RF amplification in instrumentation and test equipment for industrial process control.
DDTA144VE-7-F Brand Info
The DDTA144VE-7-F is manufactured by a leading semiconductor supplier known for delivering rugged and reliable RF components designed for industrial and communication markets. This product line emphasizes precision engineering and high-quality manufacturing processes, ensuring consistent performance in challenging environments. Designed specifically for RF amplification needs, the device integrates seamlessly into modern systems requiring low-noise, high-gain solutions in a compact form factor.
FAQ
What is the typical operating voltage for this MOSFET?
The device is typically operated with a drain-source voltage up to 12 V and can withstand gate-source voltages of ??15 V maximum. This voltage range supports stable operation in most VHF/UHF amplification circuits without risking device damage.
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How does the dual-gate configuration benefit RF amplifier design?
The dual-gate structure allows independent control of gain and input impedance, enabling improved linearity and reduced intermodulation distortion. This is especially important in RF circuits where signal integrity and low noise are critical for system performance.
