DDTA114TE-7-F Overview
The DDTA114TE-7-F is a high-performance dual digital transistor designed for robust switching and amplification tasks in industrial and consumer electronics. Featuring integrated resistors and optimized for ease of PCB layout, this device offers reliable operation with minimal external components. Its compact SOT-363 package ensures space-saving integration suitable for modern electronics manufacturing. With a focus on stable gain and thermal performance, the transistor supports demanding signal processing applications requiring efficient current handling and precise control. Offered by IC Manufacturer, it represents a dependable choice for engineers seeking quality and consistent performance in amplification and switching circuits.
DDTA114TE-7-F Technical Specifications
Parameter | Specification |
---|---|
Transistor Type | Dual Digital Transistor with Built-in Resistors |
Package | SOT-363 (6-lead) |
Collector-Emitter Voltage (VCEO) | 50 V |
Collector Current (IC) | 100 mA |
Power Dissipation (Ptot) | 300 mW |
Gain Bandwidth Product (fT) | 100 MHz |
Built-in Resistor Values | Base Resistor: 27 k??, Emitter Resistor: 2.7 k?? |
Operating Temperature Range | -55??C to +150??C |
DDTA114TE-7-F Key Features
- Integrated Base and Emitter Resistors: Simplifies circuit design by eliminating the need for external resistors, reducing component count and board space.
- Dual Transistor Configuration: Enables compact and efficient signal amplification or switching within a single package, enhancing design flexibility.
- SOT-363 Package: Provides a small footprint suitable for high-density PCB layouts, beneficial for space-constrained applications.
- High Gain Frequency (100 MHz): Supports high-speed switching and amplification, ensuring reliable performance in signal processing tasks.
DDTA114TE-7-F Advantages vs Typical Alternatives
This device offers superior integration by including built-in resistors, which reduces external component requirements compared to typical discrete transistor solutions. Its compact SOT-363 package enhances PCB space efficiency, while the robust voltage and current ratings ensure reliable operation across diverse industrial applications. The stable gain at high frequencies and wide operating temperature range provide enhanced accuracy and durability, making it a preferred option for engineers prioritizing performance and integration.
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Typical Applications
- Signal amplification and switching circuits where compact dual transistor packages reduce PCB footprint and simplify assembly.
- Driver stages for LED displays and indicators requiring consistent current control and stable switching performance.
- Interface circuits in industrial control systems that benefit from integrated resistors for simplified design and reliability.
- Consumer electronics devices demanding efficient transistor operation within limited space and thermal constraints.
DDTA114TE-7-F Brand Info
The DDTA114TE-7-F is a product from a leading semiconductor manufacturer recognized for precision and reliability in transistor technology. This dual digital transistor family is engineered to meet stringent industrial standards, offering integrated resistor components to optimize circuit design. With a focus on compact packaging and high-frequency performance, the brand supports engineers and sourcing specialists in delivering efficient and durable electronics solutions worldwide.
FAQ
What is the primary benefit of the built-in resistors in the DDTA114TE-7-F?
The integrated base and emitter resistors significantly reduce the number of external components needed, simplifying circuit design and saving PCB space. This integration also enhances reliability by minimizing solder joints and potential failure points.
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Can this transistor be used in high-frequency switching applications?
Yes, with a gain bandwidth product of 100 MHz, the device supports high-speed switching and signal amplification, making it suitable for various high-frequency electronic circuits.
What are the maximum voltage and current ratings for this transistor?
The device supports a collector-emitter voltage of up to 50 V