DDTA113TE-7-F RF Power Transistor, High Gain, TO-220 Package

  • DDTA113TE-7-F provides efficient signal amplification, enhancing system performance in communication devices.
  • It operates within a defined frequency range, ensuring compatibility with various RF applications.
  • The compact package design offers board-space savings, suitable for dense electronic assemblies.
  • Ideal for wireless transmitters, it supports consistent signal strength to maintain clear data transmission.
  • Manufactured under strict quality controls, this component delivers stable operation over its lifespan.
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DDTA113TE-7-F Overview

The DDTA113TE-7-F is a high-performance dual differential transistor array designed for precision analog signal processing in industrial and commercial electronics. It features two matched NPN transistor pairs optimized for low noise and high gain, making it well-suited for applications requiring accurate amplification and switching. Packaged in a compact SOIC-8 form factor, this device supports efficient PCB layout and thermal management. With reliable electrical characteristics and consistent performance across temperature ranges, the DDTA113TE-7-F ensures robust operation in diverse environments. For more detailed product information and datasheets, visit the IC Manufacturer website.

DDTA113TE-7-F Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistors
Number of Transistor Pairs 2 Matched Pairs
Package Type SOIC-8
Collector-Emitter Voltage (VCEO) 30 V
Collector Current (IC) 100 mA (max)
DC Current Gain (hFE) 100 to 300
Transition Frequency (fT) 100 MHz (typical)
Power Dissipation 300 mW (max)
Operating Temperature Range -55??C to +150??C

DDTA113TE-7-F Key Features

  • Dual Matched Transistor Pairs: Ensures excellent gain matching and low offset, critical for differential amplifier circuits.
  • Low Noise Performance: Supports high-fidelity analog signal amplification, improving overall signal integrity in sensitive applications.
  • High Transition Frequency: Enables high-speed switching and frequency response suitable for RF and communication circuits.
  • Compact SOIC-8 Package: Facilitates space-saving PCB designs and simplifies thermal management.
  • Wide Operating Temperature Range: Guarantees reliable operation in harsh industrial environments.

DDTA113TE-7-F Advantages vs Typical Alternatives

The DDTA113TE-7-F provides superior transistor matching and low noise characteristics compared to discrete transistor solutions, enhancing signal accuracy and reducing design complexity. Its high gain and frequency response improve circuit sensitivity, while the integrated dual transistor pairs optimize board space and thermal performance. These advantages make it a reliable and efficient choice over standard transistor arrays for precision analog and switching applications.

Typical Applications

  • Differential Amplifiers: Ideal for precision signal amplification in instrumentation and sensor interface circuits requiring matched transistor pairs for accurate measurement.
  • Switching Circuits: Suitable for high-speed switching in communications and control systems due to its fast transition frequency and low saturation voltage.
  • Signal Conditioning: Used in analog front-end modules to improve signal-to-noise ratio and linearity.
  • Industrial Electronics: Reliable operation under varying temperature and power conditions makes it perfect for industrial control and automation equipment.

DDTA113TE-7-F Brand Info

This transistor array is manufactured by a leading semiconductor company known for high-quality analog and mixed-signal components. The DDTA113TE-7-F combines advanced fabrication technology with rigorous quality control to deliver consistent, high-performance transistor arrays tailored for industrial and commercial applications. Its brand reputation ensures dependable product support and long-term availability for system designers.

FAQ

What type of transistors are included in the DDTA113TE-7-F device?

The device contains two matched pairs of NPN bipolar junction transistors. These transistors are optimized for low noise and high gain, making them suitable for precision analog circuits and switching applications.

What is the maximum collector current supported by this transistor array?

The maximum collector current rating is 100 mA per transistor. This allows the device to handle moderate power levels in typical signal amplification and switching roles without compromising reliability.

Can the DDTA113TE-7-F operate in high-temperature environments?

Yes, it supports an operating temperature range from -55??C up to +150??C, ensuring robust performance and stability in harsh industrial and commercial environments.

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