CY7C60123-PXC Overview
The CY7C60123-PXC is a high-performance 128K x 8-bit static RAM designed for fast and reliable data storage in embedded systems and industrial applications. Featuring a CMOS process, this device offers low power consumption and enhanced data retention, making it ideal for systems requiring quick access memory with minimal latency. The SRAM supports asynchronous operation with fast access times, ensuring efficient data handling. Its 32-pin PLCC package facilitates straightforward integration into various hardware platforms. For detailed manufacturer information, visit IC Manufacturer.
CY7C60123-PXC Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 128K x 8-bit |
| Access Time | 10 ns (typical) |
| Operating Voltage | 5 V ??10% |
| Power Supply Current (Active) | 30 mA (typical) |
| Power Supply Current (Standby) | 100 ??A (typical) |
| Data Retention Voltage | 2 V (minimum) |
| Package Type | 32-pin Plastic Leaded Chip Carrier (PLCC) |
| Operating Temperature Range | 0??C to +70??C |
| Standby Mode | TTL-level controlled |
CY7C60123-PXC Key Features
- High-speed access: 10 ns access time enables rapid data retrieval, enhancing system throughput and responsiveness.
- Low power consumption: CMOS technology reduces power usage, crucial for energy-efficient embedded designs.
- Asynchronous operation: Simplifies interfacing with various microprocessors without requiring complex timing control.
- Data retention capability: Maintains stored data at low voltages down to 2 V, improving reliability during power fluctuations.
- Standard 32-pin PLCC package: Facilitates easy board-level integration and replacement in existing designs.
- TTL-compatible inputs and outputs: Ensures compatibility with standard logic families prevalent in industrial systems.
- Wide operating temperature range: Suitable for commercial applications, supporting consistent performance in typical environments.
CY7C60123-PXC Advantages vs Typical Alternatives
This SRAM device offers faster access times and lower power consumption compared to traditional bipolar memory solutions. Its CMOS design enhances energy efficiency and data retention capabilities, ensuring reliable operation under varying voltage conditions. The asynchronous interface simplifies system integration, reducing design complexity versus synchronous alternatives, while the standard PLCC package supports easy replacement and compatibility.
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Typical Applications
- Embedded memory in microprocessor-based systems requiring fast, reliable, and low-power static RAM for buffering and temporary data storage.
- Cache memory in industrial control equipment where quick data access and system responsiveness are critical.
- Data storage in telecommunications devices needing robust data retention and low standby power consumption.
- General-purpose memory for digital signal processing applications that demand consistent performance and ease of interface.
CY7C60123-PXC Brand Info
The CY7C60123-PXC is part of a series of CMOS static RAM products designed by a leading semiconductor manufacturer known for high-quality memory ICs. This product line emphasizes speed, reliability, and power efficiency, targeting industrial and embedded system markets. The device is manufactured under stringent quality controls to meet rigorous performance and durability standards required by professional engineering applications.
FAQ
What is the access time of the CY7C60123-PXC SRAM?
The typical access time for this SRAM device is 10 nanoseconds, allowing rapid data retrieval suitable for high-speed embedded and industrial applications.
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What power supply voltage does this SRAM require?
This static RAM operates at a standard 5 V supply voltage with a tolerance of ??10%, ensuring compatibility with common system power rails.
How does the CY7C60123-PXC handle standby power consumption?
It features a low standby current of approximately 100 microamps, which helps reduce overall power usage when the device is not actively accessed, ideal for energy-conscious designs.




