CY7C199N-12ZXC 4K x 9 Dual-Port SRAM Memory IC – 44-Pin PLCC Package

CY7C199N-12ZXC Overview

The CY7C199N-12ZXC is a high-performance 256K x 8-bit CMOS static RAM designed for fast, reliable data storage in industrial and embedded systems. Operating with a 12 ns access time, it offers quick data retrieval suitable for applications demanding rapid memory access. Featuring low power consumption and TTL-compatible inputs and outputs, this SRAM supports both byte-wide and word-wide operations, enhancing system flexibility. The device??s asynchronous operation and robust design enable seamless integration into complex memory architectures. Available in a compact 28-pin plastic DIP package, this memory solution is ideal for engineers and sourcing specialists seeking dependable, high-speed SRAM modules. More details can be found at IC Manufacturer.

CY7C199N-12ZXC Technical Specifications

CY7C199N-12ZXC Key Features

• 12 ns Access Time: Enables rapid data access for high-speed processing systems, reducing latency and improving overall system performance.
• Asynchronous Operation: Simplifies interface design by eliminating the need for clock synchronization, enhancing compatibility with various microprocessors.
• Low Power Consumption: Minimizes energy use in both active and standby modes, critical for power-sensitive industrial applications.
• TTL-Compatible Inputs and Outputs: Ensures seamless integration with standard logic families, facilitating straightforward system design and compatibility.
• Byte-Wide and Word-Wide Operation: Offers flexible data handling options to optimize memory usage depending on application requirements.
• Robust Packaging: The 28-pin plastic DIP package supports ease of handling and soldering in industrial manufacturing environments.
• Wide Operating Temperature Range: Guarantees reliable performance in standard commercial environments, ensuring stability across diverse operating conditions.

CY7C199N-12ZXC Advantages vs Typical Alternatives

This SRAM delivers faster access times and lower power consumption compared to typical asynchronous memory modules. Its TTL-compatible interface and flexible data width operation provide enhanced integration flexibility, while the compact DIP packaging supports easier prototyping and board-level replacement. These advantages make it a superior choice for engineers requiring both speed and reliability in memory solutions without sacrificing power efficiency.

Typical Applications

• Embedded system memory storage where quick, reliable access to data is essential, such as in industrial controllers and communication equipment.
• Cache memory in microprocessor-based systems to accelerate data throughput and improve overall processing speed.
• Buffer memory for data acquisition systems that require fast buffering and temporary data retention.
• High-speed memory modules in test and measurement equipment to support rapid read/write cycles.

CY7C199N-12ZXC Brand Info

The CY7C199N-12ZXC is part of a robust SRAM product line tailored for high-speed, low-power memory solutions in industrial and commercial electronics. Manufactured by a reputable IC supplier, this device embodies proven CMOS technology with a focus on reliability and ease of integration. Its legacy in semiconductor memory markets ensures consistent availability and well-documented performance, making it a trusted component for engineers and sourcing professionals seeking a dependable static RAM solution.

FAQ

What is the primary function of the CY7C199N-12ZXC SRAM?

The primary function of this SRAM is to provide fast, volatile memory storage with a 256K x 8-bit capacity. It supports asynchronous reads and writes with 12 ns access times, making it suitable for applications requiring quick data storage and retrieval.

Can the CY7C199N-12ZXC operate at voltages other than 5 V?

No, this device is designed to operate at a nominal