CY7C199-8ZCT 8-Bit FIFO Memory IC, 32K x 8, 44-Pin PLCC Package

  • This device operates as a high-speed static RAM, enabling rapid data access for improved system performance.
  • The CY7C199-8ZCT supports fast cycle times, which reduces wait states and enhances overall processing efficiency.
  • Its compact LFCSP package allows for board-space savings, facilitating integration into space-constrained designs.
  • Ideal for embedded applications requiring quick memory reads and writes, it supports real-time data handling effectively.
  • Manufactured to meet stringent quality standards, it ensures dependable operation across various environmental conditions.
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CY7C199-8ZCT Overview

The CY7C199-8ZCT is a high-performance 16K x 8-bit CMOS static RAM designed for fast, reliable data storage and retrieval in embedded systems. Operating at a low voltage of 5V, it offers high-speed access times, making it ideal for applications requiring quick memory response and efficient power usage. The device features a 28-pin SOP package, ensuring easy integration into space-constrained industrial and computing environments. With robust electrical characteristics and a wide operating temperature range, this SRAM supports diverse industrial and commercial uses. For detailed technical support and purchasing information, consult IC Manufacturer.

CY7C199-8ZCT Technical Specifications

Parameter Specification
Memory Organization 16,384 words ?? 8 bits
Access Time 8 ns (nanoseconds)
Operating Voltage 5 V ??10%
Package Type 28-pin SOP (Small Outline Package)
Data Retention Voltage 2.0 V (minimum)
Operating Temperature Range 0??C to +70??C
Input Leakage Current ??1 ??A (maximum)
Standby Power Supply Current 10 ??A (maximum)
Data Output Three-State

CY7C199-8ZCT Key Features

  • Fast 8 ns Access Time: Enables rapid data retrieval, improving system throughput in timing-critical applications.
  • Low Power Consumption: Standby current as low as 10 ??A reduces overall system power use, ideal for battery-powered or energy-efficient designs.
  • Three-State Output: Supports bus sharing and simplifies memory expansion in complex embedded systems.
  • Standard 28-pin SOP Package: Ensures compact footprint and compatibility with automated assembly processes, enhancing manufacturing efficiency.
  • Wide Operating Temperature Range: Maintains reliable performance across 0??C to 70??C, suitable for industrial and commercial environments.
  • Robust CMOS Technology: Provides high noise immunity and low static power, optimizing system reliability and longevity.

CY7C199-8ZCT Advantages vs Typical Alternatives

This SRAM device offers competitive advantages such as a fast 8 ns access time combined with low power standby current, which many typical alternatives lack. Its three-state output facilitates seamless integration in multi-device bus systems, improving design flexibility. The standard SOP package delivers easy assembly and space savings, while its CMOS construction ensures enhanced stability and reduced power dissipation compared to older bipolar memory solutions.

Typical Applications

  • Embedded systems requiring fast, reliable volatile memory for temporary data storage, such as microcontroller-based control units in industrial automation.
  • Cache memory in computing devices where rapid access to data enhances overall system performance.
  • Buffer memory in communication devices to manage data flow efficiently in serial or parallel interfaces.
  • Data acquisition systems that need quick read/write cycles to capture and process sensor data in real time.

CY7C199-8ZCT Brand Info

The CY7C199-8ZCT is a product from a leading semiconductor manufacturer known for delivering high-quality, reliable memory components. This static RAM module combines advanced CMOS technology with industry-standard packaging to meet the demanding requirements of modern electronic systems. It reflects the brand??s commitment to precision engineering, durability, and performance excellence, supporting a broad range of industrial and commercial applications worldwide.

FAQ

What is the memory capacity and organization of the CY7C199-8ZCT?

The device features a memory organization of 16,384 words by 8 bits, totaling 131,072 bits or 16K bytes. This structure supports byte-wide data access, suitable for various data storage needs in embedded systems.

What is the operating voltage range for this SRAM?

The CY7C199-

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