CY7C199-25BVI 4K x 9 CMOS Static RAM Memory Chip – 28-Pin PDIP Package

  • This device serves as a high-speed synchronous static RAM, enabling fast and efficient data storage for complex computing tasks.
  • Operating at a 25 ns access time, it ensures timely data retrieval critical for performance-sensitive applications.
  • Its compact 44-pin SOJ package offers board-space savings, facilitating integration into designs with limited PCB area.
  • Ideal for buffering and caching in embedded systems, it helps improve data throughput and system responsiveness.
  • Manufactured with rigorous quality controls, the CY7C199-25BVI maintains consistent performance throughout its operational lifespan.
产品上方询盘

CY7C199-25BVI Overview

The CY7C199-25BVI is a high-performance 1K x 9-bit static RAM designed for applications requiring fast access times and stable data retention. With a 25 ns access time, this device supports efficient and reliable memory operations in embedded systems and industrial applications. The asynchronous SRAM architecture simplifies system design by eliminating the need for refresh cycles. Offered in a standard 32-pin plastic DIP package, it ensures easy integration into legacy and modern circuit boards. For sourcing and detailed technical support, visit IC Manufacturer.

CY7C199-25BVI Technical Specifications

ParameterSpecification
Memory Organization1,024 words ?? 9 bits
Access Time25 ns
Supply Voltage (VCC)5 V ??10%
Operating Temperature Range0??C to +70??C
Package Type32-pin Plastic DIP (Dual Inline Package)
Data Retention Voltage3 V (minimum)
Power DissipationTypical operating power: 550 mW
Input/Output Configuration9-bit wide data bus with separate I/O pins

CY7C199-25BVI Key Features

  • Fast 25 ns access time: Enables high-speed data read and write cycles, improving overall system throughput.
  • Asynchronous static RAM architecture: Simplifies memory control by removing the need for refresh operations, enhancing system reliability.
  • Low power consumption: Typical power dissipation of 550 mW supports energy-efficient designs in embedded applications.
  • Non-multiplexed address inputs: Facilitates straightforward interfacing with microprocessors and reduces latency in memory addressing.
  • Data retention voltage of 3 V: Maintains stored data integrity during power fluctuations or standby modes.
  • Industry-standard 32-pin DIP packaging: Ensures compatibility with a wide range of legacy and contemporary circuit boards, easing prototyping and manufacturing.
  • Wide operating temperature range: Suitable for commercial-grade applications requiring stable performance between 0??C and +70??C.

CY7C199-25BVI Advantages vs Typical Alternatives

This static RAM offers superior speed with a 25 ns access time compared to many standard SRAMs, making it ideal for time-critical applications. Its asynchronous design removes the complexity of refresh cycles found in dynamic RAM alternatives, enhancing reliability and lowering power consumption. The 9-bit data width provides enhanced data handling capabilities, while the robust power retention characteristics ensure stable operation under varied supply conditions.

Typical Applications

  • Embedded system memory storage where fast and reliable data access is critical, such as industrial controllers and communication devices requiring stable 1K ?? 9-bit SRAM.
  • Buffer memory in data acquisition systems to temporarily hold data for processing or transmission.
  • Cache memory in microprocessor-based designs to improve processing speed.
  • Temporary data storage in instrumentation equipment where low power standby operation is necessary.

CY7C199-25BVI Brand Info

The CY7C199-25BVI is a product from a recognized semiconductor manufacturer specializing in high-quality static RAM solutions. This device is designed to meet the demanding requirements of industrial and embedded applications by offering reliable performance, robust packaging, and precise electrical characteristics. It reflects the brand??s commitment to delivering memory components that support system efficiency and long-term stability.

FAQ

What is the memory capacity and organization of this SRAM?

The memory capacity is organized as 1,024 words by 9 bits each, providing a total of 9,216 bits of storage. This structure allows for flexible data handling in systems that require a 9-bit wide data bus.

What are the power requirements and consumption for this device?

The device operates at a standard 5 V supply voltage with a

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?