CY7C194-25SCQ 4K x 4 SRAM Memory IC – 28-Pin SOJ Package

  • This device provides fast static RAM storage, enabling efficient data access and temporary data retention in digital systems.
  • The CY7C194-25SCQ features a 25 ns access time, ensuring quick read and write cycles for improved overall system performance.
  • Its small SCQ package offers a compact footprint, contributing to board space savings in dense electronic designs.
  • Ideal for embedded systems requiring low-latency memory, the chip supports smooth operation in real-time data processing tasks.
  • Manufactured with stringent quality controls, this component delivers dependable performance over extended operating periods.
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CY7C194-25SCQ Overview

The CY7C194-25SCQ is a high-performance 4K x 4-bit Static Random Access Memory (SRAM) device designed for rapid and efficient data storage in industrial and embedded applications. Operating at a fast access time of 25 nanoseconds, this CMOS SRAM ensures low power consumption with a wide operating voltage range of 4.5V to 5.5V. Featuring a 28-pin SOJ package, it offers robust reliability and ease of integration into systems requiring fast and stable memory access. Suitable for a variety of real-time processing and buffer memory applications, this memory component provides engineers and sourcing specialists with a dependable solution from a reputable IC Manufacturer.

CY7C194-25SCQ Technical Specifications

ParameterSpecification
Memory Organization4,096 words ?? 4 bits
Access Time25 ns (nanoseconds)
Operating Voltage4.5 V to 5.5 V
Standby Power Supply Current10 ??A (typical)
Operating Temperature Range0??C to +70??C
Package Type28-pin SOJ (Small Outline J-Lead)
Data Retention Voltage2.0 V (minimum)
Input/Output CompatibilityTTL Compatible

CY7C194-25SCQ Key Features

  • Fast 25 ns Access Time: Enables high-speed data retrieval, reducing wait states and improving overall system performance in time-sensitive applications.
  • Low Power CMOS Technology: Minimizes power consumption during both active and standby modes, extending operational life in power-sensitive environments.
  • TTL Compatible Inputs and Outputs: Ensures easy interfacing with standard logic families, simplifying system design and integration.
  • Wide Operating Voltage Range: Supports stable operations from 4.5 V to 5.5 V, providing flexibility for various power supply configurations.

CY7C194-25SCQ Advantages vs Typical Alternatives

This SRAM offers superior speed and low power consumption compared to typical asynchronous memory devices. Its CMOS design reduces standby current significantly, enhancing energy efficiency. Additionally, the 28-pin SOJ package optimizes board space while maintaining reliable signal integrity. These benefits make it a preferred choice for engineers requiring fast, reliable, and power-conscious memory solutions in embedded systems.

Typical Applications

  • Buffer memory in microprocessor systems for temporary data storage and fast access during data processing tasks, improving throughput and reducing latency.
  • Embedded system memory where low power and high-speed access are critical for maintaining efficient operation in portable or industrial equipment.
  • Cache memory in digital signal processing units to store frequently accessed instructions or data, accelerating computation cycles.
  • General-purpose memory in communication equipment, supporting fast data buffering and real-time data handling requirements.

CY7C194-25SCQ Brand Info

The CY7C194-25SCQ is part of a trusted line of SRAM devices from a leading semiconductor manufacturer specializing in high-quality, high-reliability integrated circuits. This product reflects the brand??s commitment to innovative CMOS memory technology, delivering performance and energy efficiency for demanding industrial, embedded, and computing applications. The brand ensures rigorous quality control and comprehensive technical support to assist engineers and sourcing professionals in achieving optimal system integration and reliability.

FAQ

What is the primary use case for this SRAM device?

This SRAM device is primarily used for fast, temporary data storage in microprocessor and embedded systems. It serves as buffer memory or cache, where rapid access and low power consumption are essential to system performance.

Can this SRAM operate in low-voltage environments?

The device is designed to operate reliably within the voltage range of 4.5 V to 5.5 V, which covers standard 5V logic levels. For voltages below 4.5 V, operation outside specified parameters is not guaranteed, so it is not optimized for low-vol

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