CY7C1399B-20ZCT 16Mb SRAM Memory IC – 20ns Access Time, 44-Pin PLCC Package

CY7C1399B-20ZCT Overview

The CY7C1399B-20ZCT is a high-performance static RAM (SRAM) device designed for fast and reliable memory storage in industrial and embedded applications. Featuring a 4M-bit capacity organized as 512K x 8 bits, this 20ns access time SRAM provides rapid data access, making it ideal for applications requiring low latency and high-speed data handling. Its CMOS technology ensures low power consumption and robust operation across a wide temperature range. The device is supplied in a 44-pin Plastic Leaded Chip Carrier (PLCC) package, providing ease of integration into complex systems. For more detailed technical and sourcing information, visit IC Manufacturer.

CY7C1399B-20ZCT Technical Specifications

CY7C1399B-20ZCT Key Features

• High-Speed 20ns Access Time: Enables rapid data retrieval and storage, significantly improving system performance in time-critical applications.
• Large 4M-bit Memory Capacity: Provides ample space for complex data buffering and temporary storage, reducing bottlenecks in data processing.
• Low Power CMOS Technology: Minimizes power consumption during both active and standby modes, extending device longevity and reducing thermal management challenges.
• TTL Compatible Inputs/Outputs: Ensures seamless integration with standard digital logic circuits, simplifying system design and compatibility.
• Wide Operating Temperature Range: Supports operation in industrial environments, enhancing reliability under varying thermal conditions.
• 44-Pin PLCC Package: Offers a compact and durable form factor that facilitates robust mounting and easy replacement in field applications.
• Data Retention Voltage: Allows data preservation at voltages as low as 2.0 V, ensuring memory integrity during power fluctuations.

CY7C1399B-20ZCT Advantages vs Typical Alternatives

This SRAM device offers a combination of fast 20ns access speed and low power CMOS operation, outperforming many alternatives that trade speed for power consumption. Its 4M-bit capacity and TTL compatibility provide flexible integration into diverse systems. Additionally, the wide temperature range and data retention capability make it more reliable in industrial environments compared to standard SRAMs, enhancing overall system stability and reducing maintenance needs.

Typical Applications

• High-speed buffer memory in telecommunications and networking equipment, where rapid data access and storage are critical for signal processing and routing functions.
• Embedded system memory for industrial control units requiring fast and reliable temporary data storage under varying environmental conditions.
• Cache memory in computing devices, providing quick access to frequently used data to boost CPU efficiency.
• Data acquisition systems in instrumentation, enabling real-time data logging with minimal latency for accurate measurement and analysis.

CY7C1399B-20ZCT Brand Info

The CY7C1399B-20ZCT is part of a trusted family of SRAM products renowned for their performance and reliability in industrial and commercial applications. Manufactured with advanced CMOS technology, this memory device meets rigorous quality standards and is supported by comprehensive datasheets and technical resources. The brand emphasizes consistency, longevity, and ease of integration, making it a preferred choice among engineers and sourcing specialists looking for dependable semiconductor memory solutions.

FAQ

What is the memory organization and capacity of this SRAM device?

The device is organized as 512K x 8 bits, providing a total memory capacity of 4M bits. This organization allows for efficient addressing and data management in high-speed applications.

What is the significance of the 20ns