CY7C1399-15VC Overview
The CY7C1399-15VC is a high-performance 128K x 8-bit static RAM designed for industrial and commercial applications requiring fast access times and reliable data storage. Operating with a 15 ns access speed, this device ensures efficient system performance in memory-intensive environments. It features a low power CMOS architecture, making it suitable for power-sensitive industrial systems. Offered in a 44-pin Ceramic Dual In-line Package (CDIP), it supports a wide range of operating voltages and temperature ranges, making it an ideal choice for embedded systems and advanced computing platforms. For more detailed product information, please visit IC Manufacturer.
CY7C1399-15VC Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 128K x 8 bits |
| Access Time | 15 ns |
| Operating Voltage | 5 V ?? 10% |
| Package Type | 44-pin Ceramic Dual In-line Package (CDIP) |
| Power Supply Current (Operating) | 50 mA (typical) |
| Standby Current | 10 mA (typical) |
| Operating Temperature Range | -55??C to +125??C |
| Data Retention Voltage | 2 V (minimum) |
| Interface Type | Asynchronous SRAM |
CY7C1399-15VC Key Features
- High-Speed Access: 15 ns access time enables rapid data retrieval, improving system throughput in time-critical applications.
- Large Memory Density: 128K x 8-bit capacity supports extensive data storage, allowing complex processing and buffering tasks.
- Wide Temperature Range: Operates reliably from -55??C to +125??C, suitable for harsh industrial environments requiring robust performance.
- Low Power CMOS Technology: Reduces power consumption during operation and standby, extending system longevity and reducing cooling requirements.
- Standard 44-Pin CDIP Package: Ensures compatibility with existing hardware designs, facilitating easy integration into legacy systems.
CY7C1399-15VC Advantages vs Typical Alternatives
Compared to typical SRAM devices, this product offers a balanced combination of speed, power efficiency, and industrial-grade reliability. Its 15 ns access time supports faster data handling, while the extended temperature range and low power consumption make it well-suited for demanding industrial applications. This device provides robust performance without sacrificing integration convenience, making it preferable to alternatives lacking in one or more of these aspects.
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Typical Applications
- Embedded systems requiring non-volatile, high-speed memory with industrial temperature tolerance, such as automotive control units or industrial automation controllers.
- Buffer memory in high-speed data acquisition systems that demand fast and reliable temporary storage.
- Cache memory for microprocessor-based systems to improve data access efficiency and system throughput.
- Industrial instrumentation and control systems operating in harsh environments, benefiting from the device??s wide temperature range and low power operation.
CY7C1399-15VC Brand Info
The CY7C1399-15VC is part of the comprehensive memory portfolio offered by the brand, recognized for its commitment to quality and performance in semiconductor products. This static RAM device embodies the brand??s standards for reliability, speed, and industrial application readiness. It is designed to meet the exacting requirements of engineers and system designers seeking trusted, high-speed memory solutions optimized for demanding environments.
FAQ
What is the typical access time for this SRAM device?
The typical access time is 15 nanoseconds, enabling high-speed data retrieval suitable for performance-critical applications such as embedded systems and data buffering.
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What operating temperature range does this device support?
This device supports a broad industrial temperature range from -55??C to +125??C, ensuring reliable operation in harsh and demanding environmental conditions.
What is the memory organization and capacity of this SRAM?
The memory is organized as 128K words by 8 bits, providing a total of 1 Megabit of storage capacity suitable for a variety of mid-size memory applications.
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What package type is used for this memory component?
The device



