CY7C128A-45SC 128K x8 SRAM Memory IC – High-Speed CMOS, 28-Pin SOP Package

  • This device provides high-speed static RAM functionality, enabling fast data access and improved system performance.
  • With a specified access time, it ensures timely data retrieval crucial for real-time processing tasks.
  • The compact package reduces board space, allowing for efficient layout in dense electronic designs.
  • Ideal for embedded systems, it supports quick memory operations to enhance overall device responsiveness.
  • Manufactured under controlled conditions, it maintains consistent operation and long-term reliability.
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CY7C128A-45SC Overview

The CY7C128A-45SC is a high-performance 128K x 8 CMOS Static RAM designed for fast and reliable data storage in industrial and commercial applications. Operating at a 45 nanosecond access time, it supports seamless read and write operations with low power consumption. This device offers a 28-pin dual in-line package (DIP) form factor, making it suitable for a range of embedded systems requiring quick memory access and stable operation. Designed with CMOS technology, it delivers excellent noise immunity and superior data retention. For trusted sourcing and detailed specifications, visit the IC Manufacturer.

CY7C128A-45SC Technical Specifications

ParameterSpecification
Memory Size128K x 8 bits
Access Time45 ns
Package28-pin DIP
Operating Voltage5 V ??10%
Data Retention Voltage2 V (minimum)
Power Supply Current (Operating)30 mA (typical)
Power Supply Current (Standby)5 mA (typical)
Input/Output ConfigurationThree-state output buffers
Temperature Range0??C to +70??C (Commercial)
TechnologyCMOS

CY7C128A-45SC Key Features

  • Fast 45 ns access time: Enables rapid data retrieval and storage, improving system throughput and reducing latency in time-critical applications.
  • Low power CMOS technology: Minimizes power consumption during operation and standby, extending battery life and reducing heat generation.
  • Three-state outputs: Allows easy bus sharing and integration into complex memory systems without interference.
  • 28-pin DIP packaging: Simplifies prototyping and upgrading in legacy systems with standard socket compatibility.

CY7C128A-45SC Advantages vs Typical Alternatives

This static RAM device offers superior speed and power efficiency compared to many traditional bipolar SRAMs. Its CMOS design ensures lower power consumption and improved noise immunity, which enhances system reliability. The three-state outputs facilitate straightforward bus interfacing, providing integration advantages over fixed output alternatives. Its 45 ns access time supports faster read/write cycles, making it suitable for high-performance embedded systems.

Typical Applications

  • Embedded system memory expansion: Ideal for adding fast, low-power static RAM in microprocessor-based industrial control units, where quick data access and reliable operation are critical.
  • Cache memory in computing devices: Serves as a high-speed buffer to enhance processor performance by reducing wait states.
  • Data buffering in telecommunications equipment: Supports temporary storage of data streams for smooth transmission and processing.
  • Instrumentation and measurement systems: Provides stable memory storage for data logging and real-time processing applications.

CY7C128A-45SC Brand Info

The CY7C128A-45SC is part of Cypress Semiconductor??s line of high-speed CMOS static RAM products. Known for robust performance and reliability, Cypress SRAMs are widely used in industrial, computing, and telecommunications sectors. This model combines Cypress??s advanced CMOS fabrication technology with proven design to deliver consistent operation, fast access times, and low power consumption. It supports diverse applications requiring dependable and quick volatile memory.

FAQ

What is the access time of the CY7C128A-45SC, and why is it important?

The CY7C128A-45SC has an access time of 45 nanoseconds, which indicates how quickly the memory can respond to read or write commands. This fast access time is crucial in applications where timing and performance are critical, such as embedded systems and cache memory, as it reduces latency and enhances overall system speed.

What voltage levels does this SRAM operate under?

This SRAM device operates at a nominal voltage of 5 volts with a tolerance of ??10%. It also has a data retention voltage as low as 2 volts, ensuring data integrity during low power or standby modes. Maintaining proper voltage levels is essential for stable and reliable operation.

How does the three-state output feature benefit system design?

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