CY7C109V33-25VC 1Mb Asynchronous SRAM Memory Chip – 32-Pin DIP Package

  • This device provides fast, synchronous static RAM storage, enabling efficient data buffering in digital systems.
  • Access speed is designed to optimize timing performance, critical for high-speed data processing tasks.
  • The compact CBZ package reduces board space, facilitating integration into dense circuit layouts.
  • CY7C109V33-25VC suits embedded applications requiring quick memory access and reliable data retention.
  • Manufactured under stringent quality controls, this component ensures consistent operation over extended use.
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CY7C109V33-25VC Overview

The CY7C109V33-25VC is a high-performance, 32K x 8-bit static RAM designed for applications requiring fast access times and reliable data retention. Operating at a 3.3V power supply with a 25ns access time, this device offers optimized speed and low power consumption suitable for industrial and embedded systems. Featuring a standard 28-pin JEDEC SOJ package, it provides straightforward integration into existing designs with minimal footprint. With full CMOS technology, the CY7C109V33-25VC delivers low standby current and robust performance, making it an ideal memory solution for data buffering and temporary storage needs. For more details, visit IC Manufacturer.

CY7C109V33-25VC Technical Specifications

ParameterSpecification
Memory Organization32K x 8 bits
Access Time25 ns
Operating Voltage3.3 V ?? 0.3 V
Package Type28-pin SOJ (Small Outline J-Lead)
Operating Temperature Range0??C to +70??C (Commercial)
Input/Output LevelsTTL compatible
Standby CurrentTypically 10 ??A
Data Retention Voltage2.0 V minimum

CY7C109V33-25VC Key Features

  • Fast 25 ns access time: Enables high-speed data read and write operations, improving overall system throughput in time-critical applications.
  • Low operating voltage of 3.3 V: Supports modern low-power digital systems, reducing energy consumption and heat dissipation.
  • Standard 28-pin SOJ packaging: Facilitates easy PCB layout and compact system design with proven industry-standard form factor.
  • CMOS technology: Ensures very low standby current, enhancing power efficiency and increasing battery life in portable applications.
  • TTL compatible inputs and outputs: Allows seamless interfacing with a wide range of logic families and microcontrollers.
  • Robust data retention: Maintains stored information reliably even with voltage drops down to 2.0 V, ensuring system stability.

CY7C109V33-25VC Advantages vs Typical Alternatives

This device stands out by combining fast 25 ns access times with a low 3.3 V operating voltage, delivering both speed and power efficiency. Compared to older 5 V SRAMs, it offers significantly reduced power consumption and thermal output. Its standard 28-pin SOJ package simplifies integration while CMOS technology minimizes standby current, making it highly reliable for industrial and embedded applications where low power and high performance are critical.

Typical Applications

  • High-speed buffer memory in systems requiring fast data access, such as networking equipment or data acquisition modules where quick processing is essential.
  • Embedded systems needing compact, low-power memory solutions for temporary data storage and program execution.
  • Industrial control devices where reliable, fast-access SRAM supports real-time operation and system responsiveness.
  • Communications equipment that benefits from high-speed static RAM for packet buffering and protocol processing.

CY7C109V33-25VC Brand Info

The CY7C109V33-25VC is part of a reputable line of SRAM products known for delivering consistent performance and reliability. Manufactured with advanced CMOS technology, this memory device is engineered to meet stringent industrial standards. The product is widely recognized for its quality and integration flexibility, backed by comprehensive technical support and documentation from the brand, making it a trusted choice among engineers and procurement specialists in the semiconductor market.

FAQ

What is the access time specification for this SRAM?

This static RAM features a 25 ns access time, meaning it can read or write data within 25 nanoseconds. This fast speed supports applications requiring quick memory access, improving overall system performance.

What voltage levels does the device operate at?

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