CY7C106B-25VCT 1M x 8 FIFO Memory Buffer IC in 28-Pin PLCC Package

CY7C106B-25VCT Overview

The CY7C106B-25VCT is a high-performance 64K x 8-bit static RAM, designed for fast access and low power consumption in embedded systems. Featuring a 25ns access time, this memory device offers reliable data storage with true static operation, eliminating the need for refresh cycles. It supports a wide operating voltage range and is housed in a compact 28-pin plastic TSOP II package, facilitating space-efficient board layouts. The device is ideal for applications requiring high-speed memory with stable operation under varying environmental conditions. For detailed specifications and procurement, visit IC Manufacturer.

CY7C106B-25VCT Technical Specifications

CY7C106B-25VCT Key Features

• Fast 25 ns Access Time: Enables rapid data retrieval and storage, enhancing system throughput in timing-critical applications.
• Static Operation: No refresh cycles required, simplifying memory controller design and reducing power consumption.
• Wide Voltage Range (4.5 V – 5.5 V): Ensures stable operation across standard 5V systems and tolerates voltage fluctuations for robust performance.
• Low Standby Current: Minimizes power draw during idle periods, supporting energy-efficient system designs.
• Compact 28-Pin TSOP II Package: Saves PCB space and facilitates high-density memory integration in compact industrial and embedded systems.
• TTL-Compatible Inputs/Outputs: Provides straightforward interfacing with standard digital logic circuits.
• Data Retention Support: Maintains data integrity at reduced voltages, critical for power-fail scenarios and data preservation.

CY7C106B-25VCT Advantages vs Typical Alternatives

This SRAM device delivers a compelling balance of speed and power efficiency compared to typical DRAM or EEPROM alternatives. Its static operation removes the complexity of refresh circuitry, improving system reliability and latency. The fast 25ns access time outperforms many standard SRAMs at similar densities, while the low standby current supports energy-conscious applications. Integration in a compact TSOP II package enhances board-level design flexibility without sacrificing performance or stability under industrial conditions.

Typical Applications

• Embedded Microcontroller Systems: Provides fast, reliable data storage for firmware and temporary data in real-time control environments.
• Cache Memory: Acts as high-speed cache memory in computing and networking equipment to accelerate data access.
• Buffer Storage: Serves as buffer memory in communication devices, facilitating smooth data transfer and signal processing.
• Test Equipment: Used in automated test systems where quick read/write cycles and data stability are essential.

CY7C106B-25VCT Brand Info

The CY7C106B-25VCT is manufactured by Cypress Semiconductor, a trusted leader in high-quality, high-performance semiconductor devices. This product line is well-regarded for its reliability and compatibility with a wide range of industrial and commercial applications. Cypress??s commitment to rigorous quality standards ensures consistent performance and longevity, making this SRAM an optimal choice for engineers and sourcing specialists focused on durable memory solutions.

FAQ

What is the significance of the 25 ns access time in this SRAM?

The 25 ns access time indicates how quickly the SRAM can read or write data. This fast timing is critical in applications requiring high-speed data processing, as it reduces latency and improves overall system responsiveness.

Does this SRAM require any refresh cycles like DRAM?

No, the CY7C106B-