CY7C106B-20VCT Overview
The CY7C106B-20VCT is a high-performance 1M x 8-bit static RAM designed to deliver fast access times and reliable data storage for industrial and embedded applications. Operating at a 20 ns access speed, this memory device supports low power consumption with a 5 V ?? 10% supply voltage, making it suitable for systems requiring quick and stable data retrieval. Its 32-pin Thin Shrink Small Outline Package (TSOP) ensures efficient PCB space utilization and thermal performance. Engineered for robust operation with CMOS technology, this SRAM is ideal for buffering, caching, and other memory-intensive tasks in demanding environments. For more technical details, visit IC Manufacturer.
CY7C106B-20VCT Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1,048,576 words ?? 8 bits (1M ?? 8) |
| Access Time | 20 ns |
| Supply Voltage (Vcc) | 5 V ?? 10% |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 32-pin TSOP (Type I) |
| Input/Output Type | TTL compatible |
| Power Consumption (Active) | Max 150 mA |
| Standby Current | Max 100 ??A |
| Data Retention Voltage | 2 V minimum |
| Access Method | Asynchronous |
CY7C106B-20VCT Key Features
- Fast 20 ns Access Time: Enables high-speed data retrieval crucial for time-sensitive industrial processes.
- Low Power Standby Mode: Minimizes power consumption during idle periods, enhancing energy efficiency in embedded systems.
- TTL Compatible Inputs and Outputs: Ensures seamless integration with standard logic families and simplifies system design.
- Robust 32-Pin TSOP Packaging: Saves PCB space while providing excellent thermal dissipation and mechanical reliability.
- Wide Operating Temperature Range: Supports industrial-grade environments, ensuring stable operation under varying thermal conditions.
- Asynchronous Access Method: Offers straightforward interface without complex timing requirements, suitable for various control systems.
- Data Retention at Low Voltage: Maintains stored information with as low as 2 V, supporting data integrity during power fluctuations.
CY7C106B-20VCT Advantages vs Typical Alternatives
This SRAM device provides superior speed and low power consumption compared to conventional memory solutions. Its 20 ns access time accelerates system responsiveness, while the low standby current reduces overall energy use. The robust TSOP package enhances integration flexibility and thermal management, positioning it as a reliable choice for demanding industrial and embedded applications. These advantages translate into improved system efficiency, reduced footprint, and dependable performance over typical alternatives.
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Typical Applications
- High-speed cache memory in microprocessor systems, enabling rapid data access and improved processing throughput.
- Embedded system memory buffers requiring fast random access and low power consumption to extend device uptime.
- Networking equipment where rapid packet buffering and data handling are critical for performance.
- Industrial control systems that demand stable memory operation across a broad temperature range and under variable power conditions.
CY7C106B-20VCT Brand Info
The CY7C106B-20VCT is a product from Cypress Semiconductor??s robust line of CMOS static RAMs. Renowned for reliability and performance, this family of memory devices is engineered to meet the stringent demands of industrial and embedded applications. Cypress??s expertise in semiconductor technology ensures that this SRAM offers consistent quality, fast access speeds, and low power operation, backed by comprehensive datasheets and technical support to facilitate seamless integration into diverse system designs.
FAQ
What is the access time of the CY7C106B-20VCT, and why is it important?
The device features a 20 ns access time, which defines how quickly data can be read from the memory. Faster access times improve overall system speed by reducing latency in data retrieval, essential for applications requiring real-time performance
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