CY7C1046CV33-12VCT 1M x 4 CMOS SRAM Memory IC – 44-Pin PLCC Package

  • This device provides high-speed static RAM functionality, enabling fast data access and improved system performance.
  • It operates with a 3.3V power supply, ensuring compatibility with modern low-voltage digital circuits.
  • The compact VCT package minimizes board space, supporting efficient layout in dense electronic designs.
  • Ideal for buffering data in communication and networking equipment, enhancing throughput and reducing latency.
  • Manufactured under strict quality controls, this component delivers consistent operation and long-term reliability.
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CY7C1046CV33-12VCT Overview

The CY7C1046CV33-12VCT is a high-performance 4Mbit (512K x 8) high-speed CMOS static RAM optimized for fast access and low power consumption. Operating at 3.3V supply voltage with a 12ns access time, it delivers reliable and efficient memory performance for demanding industrial and embedded applications. This SRAM features a low-power CMOS design, making it ideal for use in systems requiring fast, non-volatile data storage with minimal power draw. Its industry-standard pin compatibility ensures easy integration into existing designs. For more detailed technical resources, visit the IC Manufacturer.

CY7C1046CV33-12VCT Technical Specifications

Parameter Specification
Memory Size 4Mbit (512K x 8)
Access Time 12 ns
Supply Voltage (Vcc) 3.3 V ?? 0.3 V
Operating Temperature Range 0??C to 70??C (Commercial)
Package Type 44-pin TSOP (Thin Small Outline Package)
Input/Output Configuration 8-bit bidirectional data bus
Power Consumption Low Standby and Operating Current
Data Retention Voltage 2.0 V (minimum)

CY7C1046CV33-12VCT Key Features

  • High-speed 12 ns access time: Enables rapid data retrieval, crucial for time-sensitive applications requiring fast memory access.
  • Low-voltage 3.3 V operation: Reduces power consumption and heat dissipation, improving system efficiency and reliability.
  • CMOS technology: Provides low standby current and high noise immunity, enhancing device stability in industrial environments.
  • Standard 44-pin TSOP package: Facilitates easy PCB layout and compatibility with existing hardware designs.
  • 512K x 8 memory organization: Supports versatile data storage needs, balancing capacity and access speed efficiently.

CY7C1046CV33-12VCT Advantages vs Typical Alternatives

This SRAM offers superior speed and lower power consumption compared to traditional asynchronous memory devices. Its 3.3 V low-voltage operation minimizes thermal stress and extends system longevity. The compact TSOP package enhances PCB space utilization, while the CMOS process ensures reliable operation with reduced standby current. These factors make it advantageous for embedded systems requiring fast, efficient, and stable memory performance.

Typical Applications

  • Embedded systems requiring fast and reliable volatile memory for cache or scratchpad data storage, including industrial controllers and communication equipment.
  • High-speed buffering in data acquisition systems where rapid access and low latency are critical.
  • Memory expansion in microprocessor-based designs demanding compact, low-power SRAM solutions.
  • Network and telecommunications hardware where fast data throughput and power efficiency are priorities.

CY7C1046CV33-12VCT Brand Info

The CY7C1046CV33-12VCT is part of a specialized series of high-speed static RAMs developed by a leading manufacturer known for robust semiconductor memory solutions. Designed to meet rigorous industrial and commercial demands, this product offers a blend of speed, power efficiency, and package versatility. Its manufacturer is recognized for strict quality controls and extensive support documentation, ensuring dependable performance and seamless integration for system designers and sourcing specialists.

FAQ

What is the operating voltage range of this SRAM?

This SRAM operates at a nominal voltage of 3.3 V with a tolerance of ??0.3 V, making it suitable for low-voltage systems that require efficient power management and compatibility with modern logic levels.

How fast is the access time for memory read/write operations?

The device features an access time of 12 nanoseconds, enabling rapid data retrieval and storage. This speed supports high-performance applications where quick memory access is essential.

What package type does this SRAM come

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