CY7C1041CV33-15VCT 1M x 4 CMOS SRAM Memory IC – 32-Pin VCT Package

  • This device functions as a high-speed synchronous static RAM, enabling fast data access for efficient system performance.
  • Operating at a 15 ns cycle time, it supports quick read/write operations crucial for time-sensitive applications.
  • The 44-pin TSOP package offers a compact footprint, aiding in board-space optimization in dense circuit designs.
  • Ideal for buffering and temporary data storage in embedded systems, it enhances responsiveness and task handling.
  • Built with robust design standards, CY7C1041CV33-15VCT ensures consistent operation under varying environmental conditions.
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CY7C1041CV33-15VCT Overview

The CY7C1041CV33-15VCT is a 4K x 8-bit high-speed CMOS Static RAM designed for applications requiring low power consumption and fast access times. Operating at a 3.3V power supply, it delivers a 15ns access time, enabling efficient data storage and retrieval in embedded systems and industrial electronics. Its TTL-compatible inputs and outputs ensure seamless integration with a wide range of digital circuits. This SRAM offers a reliable memory solution with minimal power dissipation, making it ideal for high-performance computing and buffering tasks. For more details, visit IC Manufacturer.

CY7C1041CV33-15VCT Technical Specifications

ParameterSpecification
Memory Organization4,096 words ?? 8 bits
Supply Voltage (Vcc)3.3 V ?? 0.3 V
Access Time15 ns
Input/Output TypeTTL compatible
Standby Current10 ??A (max)
Operating Temperature Range0??C to +70??C
Package Type44-pin Thin Quad Flat Package (TQFP)
Data Retention Voltage2.0 V (minimum)
Write Cycle Time20 ns (max)
Input Rise and Fall Time5 ns (max)

CY7C1041CV33-15VCT Key Features

  • High-Speed Access: 15 ns access time ensures rapid data retrieval, critical for real-time processing and buffering applications.
  • Low Power Consumption: Standby current as low as 10 ??A minimizes power usage, extending battery life in portable and embedded devices.
  • 3.3V Operation: Compatible with modern low-voltage digital systems, reducing overall system power requirements.
  • TTL-Compatible I/O: Ensures straightforward interfacing with standard digital logic families without additional level shifting.
  • Robust Data Retention: Maintains stored data at reduced voltage levels, enhancing reliability during power fluctuations or standby modes.
  • Compact Packaging: The 44-pin TQFP package facilitates dense board layouts, saving valuable PCB space in complex designs.

CY7C1041CV33-15VCT Advantages vs Typical Alternatives

This SRAM device offers a superior balance of speed and power efficiency compared to traditional 5V SRAMs. Its 3.3V operation reduces power dissipation significantly, while the 15 ns access time supports high-throughput applications. The low standby current enhances system reliability in power-sensitive environments. Its TTL-compatible inputs and outputs simplify integration, making it an advantageous choice for engineers requiring fast, low-power, and compact memory solutions.

Typical Applications

  • Embedded control systems requiring fast and reliable temporary data storage with low power consumption for extended operational life.
  • Buffer memory in communication devices where rapid data access is critical to performance.
  • High-speed caching in microprocessor-based systems to improve processing throughput.
  • Industrial automation equipment demanding stable and efficient memory components under standard temperature ranges.

CY7C1041CV33-15VCT Brand Info

The CY7C1041CV33-15VCT is part of a trusted family of CMOS Static RAMs designed by a leading global semiconductor manufacturer. This product line is renowned for its high-quality fabrication, ensuring consistent performance and reliability in demanding industrial and commercial applications. Engineered for low voltage operation and enhanced speed, this SRAM meets rigorous standards required by modern embedded and computing systems.

FAQ

What is the operating voltage range for this SRAM?

The device operates at a nominal voltage of 3.3 V with a tolerance of ??0.3 V, supporting stable performance within this range. This makes it suitable for low-voltage digital circuits commonly used in modern electronic designs.

How fast is the memory access time?

The memory features a maximum access time of 15 nanoseconds, enabling rapid data retrieval which is essential for applications requiring high-speed

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