CY7C1021V33-12VCT 1M x 8 SRAM Memory IC – 32-Pin PLCC Package

  • This device provides high-speed synchronous static RAM, enabling faster data access for system performance improvement.
  • Operating at a 12 ns cycle time, it supports efficient memory operations crucial for time-sensitive applications.
  • The compact 44-pin TSOP package offers board-space savings and easier integration into dense circuit designs.
  • Ideal for embedded systems requiring quick and reliable memory, enhancing overall device responsiveness.
  • Manufactured to meet stringent quality standards, ensuring dependable long-term operation in various environments.
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CY7C1021V33-12VCT Overview

The CY7C1021V33-12VCT is a high-performance 1M x 8-bit Static Random Access Memory (SRAM) designed for applications demanding fast access times and robust data retention. Operating on a 3.3V power supply, this SRAM offers a 12 ns access time, ensuring rapid data retrieval and storage for real-time processing. Its CMOS technology enables low power consumption, making it suitable for industrial, telecommunications, and embedded systems. The device??s 28-pin TSOP II package supports streamlined PCB layout and system integration. Ideal for engineers and sourcing specialists, this SRAM balances speed, reliability, and power efficiency, providing a dependable memory solution. More details available at IC Manufacturer.

CY7C1021V33-12VCT Technical Specifications

ParameterSpecification
Memory Organization1,048,576 words ?? 8 bits
Access Time12 ns
Supply Voltage (VCC)3.0 V to 3.6 V (Nominal 3.3 V)
Operating Temperature Range0??C to 70??C
Package Type28-pin Thin Small Outline Package (TSOP II)
Input/Output Configuration8-bit bidirectional data bus
Power Consumption (Standby)Typically 100 ??A
Power Consumption (Operating)Typically 150 mA at 12 ns
Data Retention Voltage2.0 V (minimum)

CY7C1021V33-12VCT Key Features

  • Fast 12 ns Access Time: Enables high-speed data processing essential for performance-critical applications such as networking and embedded control.
  • Low Power CMOS Technology: Minimizes power consumption during both active and standby modes, extending system battery life and reducing thermal stress.
  • 3.3V Power Supply Compatibility: Supports modern low-voltage system designs, enhancing integration with contemporary industrial and communication equipment.
  • 28-Pin TSOP II Package: Offers a compact footprint that simplifies PCB layout and reduces overall system size without sacrificing performance.

CY7C1021V33-12VCT Advantages vs Typical Alternatives

This SRAM device provides a compelling advantage with its combination of fast 12 ns access time and low-voltage 3.3V operation, unlike many older 5V alternatives. It offers reduced power consumption and improved thermal performance, making it more reliable for continuous industrial use. The compact TSOP II package also facilitates efficient board space utilization, critical in densely packed electronic assemblies.

Typical Applications

  • High-speed buffering and caching in telecommunications infrastructure where rapid data access and low latency are essential to maintain network performance.
  • Embedded systems requiring reliable, low-power SRAM for real-time data storage and manipulation.
  • Industrial automation controllers that depend on fast, stable memory to execute control algorithms efficiently.
  • Data acquisition systems where fast access and data retention at lower voltages improve system responsiveness and power efficiency.

CY7C1021V33-12VCT Brand Info

This product is part of the CY7C1021V33 series, known for its robust and reliable SRAM solutions tailored to meet industrial-grade requirements. The series is manufactured with advanced CMOS technology, ensuring optimized performance for high-speed and low-power applications. Designed to comply with stringent quality and consistency standards, the CY7C1021V33-12VCT is a trusted choice for engineers seeking dependable memory components in embedded and industrial domains.

FAQ

What is the primary function of the CY7C1021V33-12VCT SRAM?

This SRAM provides fast, volatile memory storage with a capacity of 1M x 8 bits. It is used to temporarily hold data for quick read and write operations in systems requiring high-speed

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