CY7C1021V33-12VC 1Mb SRAM Memory IC – High-Speed Static RAM, 32-Pin DIP Package

CY7C1021V33-12VC Overview

The CY7C1021V33-12VC is a high-performance, 1M-bit (128K x 8) static RAM (SRAM) designed for reliable, fast-access memory applications. Operating at a 3.3V power supply, this device delivers a fast 12 ns access time, making it suitable for demanding industrial and embedded systems requiring quick data retrieval and low latency. Its CMOS technology ensures low power consumption while maintaining excellent data retention and signal integrity. The SRAM supports byte-write capability and offers a convenient 32-pin PDIP or PLCC package. IC Manufacturer provides this memory solution for engineers and sourcing specialists seeking efficient, high-speed embedded memory components.

CY7C1021V33-12VC Technical Specifications

CY7C1021V33-12VC Key Features

• Fast 12 ns Access Time: Enables rapid data read/write cycles, improving system responsiveness in time-critical applications.
• Low Voltage 3.3V Operation: Reduces power consumption and heat dissipation, which is critical for power-sensitive industrial and embedded systems.
• Byte Write Capability: Allows selective modification of upper or lower bytes, enhancing flexibility and reducing unnecessary data writes.
• CMOS Technology: Ensures low static and dynamic power use while maintaining high noise immunity and signal integrity.
• Wide Operating Temperature Range: Suitable for commercial-grade applications requiring reliable performance from 0??C to 70??C.
• Standard 32-Pin PDIP/PLCC Package: Facilitates easy integration into existing PCB layouts with established footprint standards.
• Data Retention at Low Voltage: Maintains stored data reliably during power-down conditions down to 2.0V.

CY7C1021V33-12VC Advantages vs Typical Alternatives

This SRAM offers a compelling balance of fast access speed, low power consumption, and byte-level write flexibility compared to typical asynchronous SRAM alternatives. Its 3.3V operation reduces power demands while maintaining high-speed performance, making it ideal for industrial and embedded systems where efficiency and reliability are critical. Additionally, the CMOS design improves noise immunity and reduces standby current, enhancing overall system stability and longevity.

Typical Applications

• Embedded system memory requiring fast read/write cycles and low power consumption, such as communication devices and industrial controllers.
• Buffer memory in data acquisition systems, where quick data access and reliability are essential.
• Cache memory in microprocessor-based designs to increase processing speed and reduce latency.
• Temporary storage in networking equipment, enabling efficient packet handling and data flow control.

CY7C1021V33-12VC Brand Info

The CY7C1021V33-12VC is part of a family of high-performance SRAM devices produced by a leading semiconductor manufacturer known for quality memory components. This product line is engineered to meet industrial and commercial standards, combining advanced CMOS technology with robust design features. The device is widely supported with comprehensive documentation, ensuring engineers and sourcing specialists can integrate it smoothly into their systems while benefiting from proven reliability and manufacturer support.

FAQ

What is the main memory capacity and organization of this SRAM?

The memory capacity of this device is 1 Megabit, organized as 128K words by 8 bits per word. This configuration supports a broad range of applications needing moderate memory