CY7C1021DV33-10ZSXA 1M x 8 SRAM Memory IC ?C 44-Pin PLCC Package

CY7C1021DV33-10ZSXA Overview

The CY7C1021DV33-10ZSXA is a high-performance 1M-bit (128K x 8) Static Random-Access Memory (SRAM) device designed for industrial and commercial applications requiring fast, reliable memory storage. Operating at a 3.3V power supply with a 10 ns access time, this SRAM supports asynchronous read and write operations, providing low latency and stable data retention. Packaged in a 44-pin Small Outline Integrated Circuit (SOIC) format, it optimizes board space while ensuring ease of integration. This device is engineered for applications demanding quick data access and robust performance under standard operating conditions. For detailed datasheet and sourcing, visit IC Manufacturer.

CY7C1021DV33-10ZSXA Technical Specifications

CY7C1021DV33-10ZSXA Key Features

• Fast 10 ns Access Time: Enables rapid data retrieval and storage, critical for high-speed computing and buffering applications.
• 3.3V Low Voltage Operation: Reduces power consumption and heat generation, facilitating energy-efficient system designs.
• Asynchronous SRAM Architecture: Simplifies interface design by supporting independent read/write cycles without clock dependency.
• 44-pin SOIC Package: Offers compact footprint and easy PCB layout integration, enhancing system miniaturization.
• Low Standby Current: Minimizes power draw during idle periods, improving device longevity and system power management.
• Industrial Temperature Range: Ensures reliable operation across standard commercial environments, suitable for diverse industrial settings.

CY7C1021DV33-10ZSXA Advantages vs Typical Alternatives

This SRAM device delivers superior speed and low power operation compared to traditional asynchronous memories. Its 10 ns access time and 3.3 V supply reduce latency and energy consumption, which are critical in embedded and industrial applications. The 44-pin SOIC package ensures easier integration than bulkier counterparts, while low standby current enhances reliability and system efficiency under varying load conditions.

Typical Applications

• High-speed data buffering in networking equipment and telecommunications where rapid access and low latency are essential for performance.
• Embedded systems requiring fast and stable volatile storage for temporary data processing tasks.
• Industrial control systems that benefit from reliable memory components operating within commercial temperature ranges.
• Consumer electronics demanding compact memory solutions with low power consumption and fast access.

CY7C1021DV33-10ZSXA Brand Info

The CY7C1021DV33-10ZSXA is part of a comprehensive SRAM product line known for delivering high-speed, reliable memory solutions optimized for industrial and commercial electronics. Designed with precision manufacturing standards, this memory device is backed by rigorous quality control to ensure consistent performance and longevity. Its proven architecture and package design have made it a preferred choice among engineers seeking efficient and robust SRAM components for complex system integration.

FAQ

What is the memory organization and capacity of this SRAM?

The device is organized as 128K words by 8 bits, providing a total memory capacity of 1 megabit. This organization allows for efficient byte-wide data access suitable for various digital applications.

What are the power supply requirements for this device?

This SRAM operates at a nominal voltage of 3.3 volts with a tolerance of ??0.3 V. This low voltage operation helps reduce overall system power consumption, making it compatible with modern low-power designs.

How fast can data be accessed from this memory?

The device features an access time of 10 nanoseconds, supporting high-speed