CY7C1021CV33-12BAIT 1M x 8 SRAM Memory IC – 44-Pin TSOP Package

CY7C1021CV33-12BAIT Overview

The CY7C1021CV33-12BAIT is a high-performance 1M x 8-bit CMOS Static RAM designed for industrial and embedded systems requiring fast and reliable memory solutions. Operating at a 3.3V power supply with a 12 ns access time, this SRAM offers low power consumption combined with high-speed data access, ideal for buffering, cache, and temporary data storage applications. Its compatibility with standard asynchronous SRAM interfaces facilitates easy integration into diverse system architectures. This memory device is a solid choice for engineers and sourcing specialists seeking robust, efficient, and cost-effective SRAM solutions from a trusted IC Manufacturer.

CY7C1021CV33-12BAIT Technical Specifications

CY7C1021CV33-12BAIT Key Features

• Fast 12 ns access time: Enables rapid data retrieval, reducing wait states and improving overall system performance.
• Low voltage 3.3 V operation: Supports lower power consumption, making it suitable for power-sensitive industrial applications.
• Asynchronous interface: Provides compatibility with a wide range of microprocessors and controllers without complicated timing requirements.
• Compact 44-pin PLCC package: Facilitates high-density board layouts and easy socket compatibility.
• Data retention mode: Maintains data integrity during power-down conditions with minimal power draw.

CY7C1021CV33-12BAIT Advantages vs Typical Alternatives

This SRAM offers a compelling balance of speed and power efficiency compared to traditional 5 V SRAMs. Its 3.3 V operation reduces power consumption while maintaining fast 12 ns access times, enhancing system reliability and thermal performance. The asynchronous interface simplifies design integration, and the data retention capability ensures data safety during standby, making it advantageous for industrial and embedded applications demanding consistent and efficient memory solutions.

Typical Applications

• High-speed cache memory in embedded processors where fast read/write cycles improve system throughput and responsiveness.
• Buffer memory in networking equipment to temporarily store data packets during transmission.
• Temporary data storage in industrial control systems requiring durable and reliable memory components.
• General-purpose static RAM for instrumentation and test equipment where quick access to data is critical.

CY7C1021CV33-12BAIT Brand Info

The CY7C1021CV33-12BAIT is part of the CY7C1021C series, offered by a leading semiconductor manufacturer specializing in high-quality CMOS SRAM devices. This product line is recognized for its robust performance, low power consumption, and wide industry acceptance. The device is engineered to meet rigorous industrial standards, ensuring dependable operation in various electronic systems. Its proven architecture and manufacturing quality make it a preferred choice for engineers and procurement specialists focused on dependable memory solutions.

FAQ

What is the operating voltage for this SRAM device?

The device operates at a low voltage of 3.3 V with a tolerance of ??0.3 V, making it suitable for modern low-power digital systems while maintaining compatibility with standard 3.3 V logic levels.

How fast can data be accessed from this memory?

The SRAM supports an access time of 12 nanoseconds, enabling