CY7C1021BV33L-15BAI 1Mb SRAM Memory IC – 32-Pin PLCC Package

  • This device provides fast static RAM storage, improving data access speed in embedded systems.
  • With a 15 ns access time, it enables quick memory retrieval essential for high-performance computing.
  • The compact LCC package reduces board space, allowing more efficient hardware designs.
  • Ideal for buffering data in communications equipment where low latency is critical.
  • Manufactured to meet stringent quality standards, ensuring consistent operation under varied conditions.
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CY7C1021BV33L-15BAI Overview

The CY7C1021BV33L-15BAI is a high-performance 1M-bit static RAM (SRAM) device designed for applications requiring fast, reliable, and low-power memory storage. Featuring a 128K x 8-bit organization and a 33 MHz maximum operating frequency, this SRAM offers efficient data access with a 15 ns access time. It operates on a single 3.3 V power supply, optimizing power consumption while maintaining high-speed operation. The device comes in a compact 32-pin PLCC package, making it suitable for embedded systems, networking equipment, and industrial control applications. For detailed product support and purchasing options, visit IC Manufacturer.

CY7C1021BV33L-15BAI Technical Specifications

ParameterSpecification
Memory Density1 Mbit (128K x 8 bits)
Access Time15 ns
Operating Voltage3.3 V ?? 0.3 V
Operating FrequencyUp to 33 MHz
Data I/O8 bits
Package Type32-pin PLCC
Standby CurrentTypically 25 mA
Operating Temperature Range0??C to +70??C
Interface TypeAsynchronous SRAM

CY7C1021BV33L-15BAI Key Features

  • Fast 15 ns access time: Enables rapid data retrieval, essential for high-speed computing and real-time processing.
  • Low-voltage operation at 3.3 V: Reduces power consumption while maintaining performance, benefiting battery-powered and energy-sensitive systems.
  • Asynchronous SRAM interface: Simplifies integration by eliminating the need for clock signals, allowing flexible timing control in diverse applications.
  • Compact 32-pin PLCC package: Offers space-saving benefits for PCB layouts without compromising pin accessibility or signal integrity.

CY7C1021BV33L-15BAI Advantages vs Typical Alternatives

This SRAM device provides a balanced combination of speed, power efficiency, and compact packaging compared to typical alternatives. Its 15 ns access time and 3.3 V operation deliver improved performance and lower power draw, making it ideal for embedded and industrial systems where reliability and fast memory access are critical. The asynchronous interface further enhances integration flexibility over synchronous alternatives.

Typical Applications

  • Embedded systems requiring fast and reliable memory for program and data storage in industrial automation and control environments.
  • Networking equipment where quick data buffering and low power operation are necessary for efficient data handling.
  • Telecommunications devices that benefit from fast memory access and compact package sizes.
  • Consumer electronics with space constraints demanding high-density, low-voltage SRAM solutions.

CY7C1021BV33L-15BAI Brand Info

This device is manufactured by a leading semiconductor company recognized for delivering high-quality memory products tailored to industrial and commercial applications. The product line ensures stringent quality controls, consistent performance, and comprehensive documentation, supporting engineers and sourcing specialists in deploying reliable memory solutions across various electronic platforms.

FAQ

What is the typical power consumption of this SRAM device?

The CY7C1021BV33L-15BAI typically consumes around 25 mA in standby mode under standard operating voltage conditions (3.3 V). This low power consumption helps reduce overall system energy use, especially in battery-powered or energy-sensitive applications.

What package options are available for this SRAM?

This specific model is available in a 32-pin Plastic Leaded Chip Carrier (PLCC) package, which provides a compact footprint suitable for dense PCB layouts while allowing for straightforward socket or surface-mount installation.

Can this memory device operate at voltages other than 3.3 V?

The device is

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