The CY7C1021BV33L-10ZXC is a high-performance 1Mb Asynchronous SRAM designed for demanding industrial and embedded applications requiring fast, reliable memory access. Operating at a 3.3V power supply with a maximum access time of 10 nanoseconds, this 128K x 8-bit memory device offers low power consumption and enhanced data integrity. Its standard 32-pin 600 mil SOJ package ensures easy integration into existing system architectures. Ideal for buffering, caching, and temporary data storage, this SRAM supports efficient system performance in applications ranging from communication equipment to industrial automation. For more detailed product information, visit IC Manufacturer.
CY7C1021BV33L-10ZXC Technical Specifications
Parameter
Specification
Memory Density
1 Megabit (128K x 8-bit)
Access Time
10 ns (nanoseconds)
Operating Voltage
3.3 V ?? 0.3 V
Package Type
32-pin SOJ (Small Outline J-Lead), 600 mil
Operating Temperature Range
0??C to 70??C (Commercial)
Data I/O
8-bit
Power Consumption (Operating)
Typical 300 mW @ 10 ns
Standby Current
10 ??A (typical)
Input/Output Type
TTL compatible
CY7C1021BV33L-10ZXC Key Features
High-Speed Access: With a 10 ns access time, this SRAM ensures rapid data retrieval, ideal for applications requiring fast memory performance and reduced system latency.
Low Power Operation: Operating at 3.3V with low standby current minimizes power consumption, contributing to energy-efficient system designs.
Standard SOJ Packaging: The 32-pin 600 mil SOJ package facilitates easy PCB layout and reliable soldering, supporting streamlined manufacturing processes.
Wide Operating Temperature Range: Suitable for commercial temperature environments (0??C to 70??C), ensuring stable operation across typical industrial conditions.
Asynchronous Operation: Enables flexible timing without the need for a clock signal, simplifying interfacing in diverse system architectures.
TTL-Compatible Inputs/Outputs: Guarantees compatibility with standard logic levels, easing integration with a variety of digital devices.
CY7C1021BV33L-10ZXC Advantages vs Typical Alternatives
This SRAM device offers superior speed and low power consumption compared to typical asynchronous memories. Its 3.3V operation enhances energy efficiency while maintaining fast 10 ns access times, making it ideal for systems where both performance and power savings are critical. The SOJ packaging improves integration reliability and reduces footprint compared to bulkier alternatives, supporting compact, high-density designs.
High-speed data buffering and caching in communication systems, enabling efficient temporary storage and quick data access to optimize throughput.
Embedded system memory for microcontrollers and DSPs, providing fast, reliable storage for program code and data.
Industrial automation equipment requiring stable, low-power memory solutions for sensor data logging and process control.
Networking devices and routers that demand responsive memory for packet buffering and real-time data processing.
CY7C1021BV33L-10ZXC Brand Info
The CY7C1021BV33L-10ZXC is part of a well-established line of high-speed SRAMs produced by a leading semiconductor manufacturer specializing in memory solutions. This product embodies the brand??s commitment to delivering robust, energy-efficient, and fast-access semiconductor memories designed for industrial and commercial applications. The brand??s extensive quality control and support infrastructure ensure reliable performance and long-term availability for system integrators and electronic engineers.
