CY7C1021BNV33-10ZC 1M x 8 SRAM Memory IC – 44-Pin PLCC Package

  • This device provides high-speed FIFO memory, enabling efficient data buffering in digital systems.
  • Operating frequency supports fast data transfer rates, critical for maintaining system performance.
  • The compact package reduces board space, facilitating integration in size-constrained applications.
  • Ideal for use in communication systems where temporary data storage smooths data flow.
  • Designed with robust manufacturing standards to ensure consistent, long-term operation.
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CY7C1021BNV33-10ZC Overview

The CY7C1021BNV33-10ZC is a high-speed, low-power 1-Mbit static RAM designed for industrial and commercial applications requiring fast and reliable memory access. Operating at a 3.3V power supply with a 10 ns access time, it offers efficient data retention and quick read/write cycles. This device supports a fully static operation, eliminating the need for refresh cycles, which simplifies system design and improves overall reliability. Its 32K x 8-bit organization and standard asynchronous interface make it ideal for embedded control systems, cache memory, and other high-performance applications. For detailed technical support and sourcing, visit the IC Manufacturer.

CY7C1021BNV33-10ZC Technical Specifications

ParameterSpecification
Memory Organization32,768 x 8-bit (1 Mbit)
Access Time10 ns
Power Supply Voltage (Vcc)3.3 V ?? 0.3 V
Operating Temperature Range0??C to +70??C
Standby Current10 ??A (typical)
Operating Current45 mA (typical)
Package Type44-pin TSOP II
Data Retention Voltage2.0 V minimum
InterfaceAsynchronous SRAM

CY7C1021BNV33-10ZC Key Features

  • 10 ns access time: Enables rapid data retrieval and high-speed operation, crucial for performance-critical applications.
  • 3.3 V low-voltage operation: Reduces power consumption and heat generation, supporting energy-efficient system designs.
  • Fully static operation: Eliminates the need for refresh cycles, simplifying system architecture and improving reliability.
  • Low standby current: Minimizes power draw during idle periods, extending battery life in portable or power-sensitive devices.
  • Standard 32K x 8-bit organization: Facilitates easy integration with common microcontrollers and processors without complex memory management.
  • 44-pin TSOP II package: Offers a compact footprint for space-constrained applications while ensuring robust mechanical and thermal performance.
  • Wide operating temperature range: Ensures stable performance in industrial environments from 0??C to 70??C.

CY7C1021BNV33-10ZC Advantages vs Typical Alternatives

This SRAM offers significant advantages over typical alternatives by combining fast 10 ns access times with low 3.3 V power operation, resulting in efficient and high-speed memory access. Its fully static design removes complexity associated with refresh cycles, enhancing system reliability. The compact TSOP II package supports space-saving layouts, and its low standby current optimizes power consumption compared to traditional asynchronous SRAMs. These characteristics make it a preferred choice for engineers prioritizing speed, power efficiency, and ease of integration.

Typical Applications

  • Embedded systems memory: Provides fast, reliable storage for microcontroller-based applications requiring quick data access and low power consumption.
  • Cache memory: Serves as high-speed cache in digital signal processors and microprocessors to improve system throughput.
  • Networking equipment: Used for buffering and temporary storage in routers and switches demanding low latency and high data integrity.
  • Industrial control systems: Supports stable operation in automation and control applications requiring consistent, fast memory performance within a wide temperature range.

CY7C1021BNV33-10ZC Brand Info

The CY7C1021BNV33-10ZC is a product from a leading semiconductor manufacturer known for delivering high-performance memory solutions tailored to industrial and commercial electronics. This SRAM device reflects the brand??s commitment to quality, reliability, and innovation. Designed to meet rigorous industry standards, it supports engineers and sourcing specialists seeking proven memory components that enhance system speed, reduce power consumption, and simplify design integration.

FAQ

What is the access time of the CY7C1021BNV33-10ZC?

The device features a fast access time of 10 nanoseconds, enabling rapid read

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