CY7C1021BNL-15ZI 1M x 8 SRAM Memory IC – 44-Pin PLCC Package

  • This device provides high-speed synchronous static RAM, enabling fast data access for system memory applications.
  • Operating at a 15 ns access time, it supports quick read and write cycles critical in performance-sensitive tasks.
  • The compact SOJ package reduces board space requirements, facilitating efficient hardware integration.
  • Ideal for use in embedded systems, it enhances processing speed and responsiveness in real-time computing.
  • Built to meet stringent quality standards, it ensures consistent operation and longevity under varying conditions.
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CY7C1021BNL-15ZI Overview

The CY7C1021BNL-15ZI is a high-performance 1 Mbit (128K x 8) static random-access memory (SRAM) device designed for fast and reliable data storage in industrial and embedded systems. Operating with a 15 ns access time, this SRAM supports asynchronous operation and low power consumption, making it suitable for applications requiring quick data retrieval and minimal energy usage. Packaged in a compact 32-pin SOJ form factor, it integrates seamlessly into space-constrained designs. The device features a single 5 V power supply and is optimized for system designs where data integrity and speed are critical. For further details, visit IC Manufacturer.

CY7C1021BNL-15ZI Technical Specifications

ParameterSpecification
Memory Organization128K x 8 bits
Access Time15 ns
Operating Voltage5 V ?? 10%
Power Consumption (Active)Max 440 mW
Power Consumption (Standby)Max 10 mW
Package Type32-pin SOJ
Input/Output TypeTTL Compatible
Operating Temperature Range0??C to +70??C
Data Retention Voltage2.0 V minimum
Chip Enable (CE) and Write Enable (WE)Asynchronous control signals

CY7C1021BNL-15ZI Key Features

  • Fast 15 ns access time: Enables rapid data retrieval and improved system throughput in high-speed computing environments.
  • Low active and standby power: Minimizes energy consumption, extending system battery life and reducing thermal stress.
  • Asynchronous operation: Supports flexible timing control without requiring a clock signal, simplifying interface design.
  • TTL-compatible inputs and outputs: Ensures easy integration with standard digital logic circuits and microcontrollers.
  • Compact 32-pin SOJ package: Saves PCB space while providing robust mechanical and thermal performance.
  • Wide operating temperature range: Suitable for typical commercial applications requiring reliable operation from 0??C to 70??C.
  • Data retention capability: Maintains stored information with as low as 2.0 V, supporting data integrity during power interruptions.

CY7C1021BNL-15ZI Advantages vs Typical Alternatives

This device offers a combination of fast access speed and low power consumption that stands out among typical SRAM alternatives. Its asynchronous control signals reduce complexity compared to synchronous SRAMs, while the 32-pin SOJ package ensures efficient board layout. The low standby power and wide operating temperature make it more reliable in diverse industrial environments, providing engineers with a dependable memory solution that balances performance with energy efficiency.

Typical Applications

  • Embedded systems requiring non-volatile, fast-access memory for buffering and temporary data storage in industrial automation and instrumentation devices.
  • Data cache memory in high-speed computing circuits to enhance processing efficiency and reduce latency.
  • Communications equipment needing reliable fast SRAM for packet buffering and protocol handling.
  • Consumer electronics where low power and quick response SRAM contribute to improved device performance and battery life.

CY7C1021BNL-15ZI Brand Info

The CY7C1021BNL-15ZI is a product from Cypress Semiconductor, well-known for its high-quality semiconductor memory solutions. This SRAM device exemplifies the brand??s commitment to delivering reliable, high-speed memory components that meet the demands of industrial and embedded system designers. Cypress??s expertise ensures robust product performance, supported by comprehensive datasheets and application notes to aid integration.

FAQ

What is the access time of this SRAM device?

The access time of the CY7C1021BNL-15ZI is 15 nanoseconds, which allows for high-speed data retrieval suitable for demanding processing environments.

What voltage supply does this memory device require?

It operates on a single 5 V power supply with a tolerance of ??10%, providing

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