CY7C1020B-15VCT Overview
The CY7C1020B-15VCT is a high-performance 1M x 8-bit static random-access memory (SRAM) device designed for fast and reliable data storage in advanced electronic systems. Operating at a 15 ns access time, it supports low power consumption and offers robust data integrity with its CMOS technology. This SRAM is optimized for applications requiring quick access to large amounts of data, making it suitable for high-speed cache memory, buffer storage, and embedded systems. Designed with a 32-pin plastic dual in-line package (PDIP), it facilitates easy integration into various industrial and commercial designs. For detailed technical information, visit IC Manufacturer.
CY7C1020B-15VCT Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 1,048,576 words x 8 bits (1M x 8) |
| Access Time | 15 ns |
| Operating Voltage (Vcc) | 5 V ?? 10% |
| Input/Output Voltage (Vih / Vil) | Min 2.0 V / Max 0.8 V (TTL compatible) |
| Standby Current | 10 mA (Max) |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 32-pin Plastic Dual In-line Package (PDIP) |
| Data Retention Voltage | 2.0 V (Min) |
| Input/Output Configuration | Three-state output |
CY7C1020B-15VCT Key Features
- Fast 15 ns access time: Enables rapid data retrieval, critical for high-speed computing and buffering applications.
- Low power CMOS technology: Reduces power consumption while maintaining high performance, improving system efficiency.
- TTL-compatible inputs and outputs: Ensures seamless integration with standard logic circuits for ease of design.
- Three-state outputs: Allows multiple devices to share a common data bus without interference, enhancing system flexibility.
- Robust data retention: Maintains data integrity even at lower voltages down to 2.0 V, enhancing reliability in variable power conditions.
- Industry-standard 32-pin PDIP package: Facilitates straightforward PCB layout and replacement in existing designs.
CY7C1020B-15VCT Advantages vs Typical Alternatives
This device offers superior access speed at 15 ns, outperforming many typical SRAMs in its class, while consuming less power thanks to CMOS technology. Its three-state output design provides enhanced system integration capability, making it more versatile compared to conventional SRAMs. Additionally, its stable data retention voltage ensures reliable operation under fluctuating power conditions, giving it an edge in industrial and embedded applications.
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Typical Applications
- High-speed cache memory in microprocessors and digital signal processors where quick data access and low latency are essential for performance.
- Buffer storage for data transfer between high-speed peripherals and systems requiring efficient temporary data holding.
- Embedded systems that demand reliable, fast, and low-power SRAM for system code and data storage.
- Networking and telecommunications equipment that require stable and fast memory modules for packet buffering and processing.
CY7C1020B-15VCT Brand Info
The CY7C1020B-15VCT is part of the CY7C1020B series, known for delivering high-quality CMOS static RAM solutions designed to meet the demands of modern digital systems. This series emphasizes speed, low power consumption, and ease of integration, making it a preferred choice among engineers for memory-intensive applications. The product line is backed by rigorous manufacturing standards to ensure consistent performance and reliability across various industrial environments.
FAQ
What is the access speed of the CY7C1020B-15VCT SRAM?
The memory device operates with an access time of 15 nanoseconds, allowing rapid data retrieval suitable for high-speed computing applications and systems requiring quick response times.
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What voltage levels does this SRAM support for operation and data retention?
It operates at a standard 5 V supply voltage with ??10% tolerance




