CY7C1020B-12VC Overview
The CY7C1020B-12VC is a high-performance 1 Megabit (128K x 8) static random-access memory (SRAM) device designed for fast, reliable data storage in embedded systems and industrial applications. Featuring a 12 ns access time, this SRAM supports low-voltage operation with a 5 V ??10% power supply, ensuring compatibility with a variety of digital interfaces. Its TTL-compatible inputs and outputs facilitate seamless integration with microprocessors and microcontrollers. The device is housed in a standard 28-pin plastic DIP package, making it ideal for both prototyping and production environments. For detailed technical resources, visit IC Manufacturer.
CY7C1020B-12VC Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 128K x 8 bits |
| Access Time | 12 ns (nanoseconds) |
| Supply Voltage (Vcc) | 5 V ??10% |
| Input/Output Compatibility | TTL compatible |
| Data Retention Voltage | 2 V minimum |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 28-pin Plastic DIP (Dual Inline Package) |
| Power Consumption (Standby) | Typically 20 mA |
CY7C1020B-12VC Key Features
- High-Speed Access: 12 ns access time enables rapid data retrieval, critical for performance-sensitive systems.
- 5 V ??10% Power Supply: Ensures stable operation and compatibility with standard industrial power rails.
- TTL-Compatible Inputs and Outputs: Facilitates straightforward interface with common digital logic devices and microcontrollers.
- Low Power Standby Mode: Reduces power consumption during idle periods, enhancing overall system efficiency.
- Standard 28-Pin DIP Packaging: Simplifies prototyping and mounting in existing PCB layouts without specialized sockets.
- Robust Temperature Range: Suitable for commercial industrial environments up to 70??C.
- Data Retention at Reduced Voltage: Maintains stored data down to 2 V, providing resilience during power fluctuations.
CY7C1020B-12VC Advantages vs Typical Alternatives
Compared to typical SRAM alternatives, this device offers a balance of fast 12 ns access time and low standby power consumption, optimizing both speed and energy efficiency. Its TTL-compatible interface and robust 5 V supply tolerance ensure easier integration and higher reliability in industrial settings. The standard DIP package supports easy replacement and prototyping, distinguishing it from surface-mount devices that require more complex assembly.
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Typical Applications
- High-speed cache memory in microprocessor-based systems where quick data access and reliability are essential for system performance and stability.
- Buffer memory in data acquisition and signal processing equipment requiring fast and consistent read/write cycles.
- Embedded systems for industrial control, providing dependable temporary data storage under varying environmental conditions.
- General-purpose memory expansion for telecommunications and networking hardware that demand low latency and stable operation.
CY7C1020B-12VC Brand Info
The CY7C1020B-12VC is manufactured by Cypress Semiconductor, a leading provider of high-quality memory and programmable logic devices. This product line is known for delivering reliable, high-speed SRAM solutions tailored to demanding industrial and embedded applications. Cypress??s focus on robust design and manufacturing ensures consistent performance, making this device a trusted choice among engineers and sourcing professionals worldwide.
FAQ
What is the access time for the CY7C1020B-12VC SRAM?
This SRAM device features a 12 nanosecond access time, allowing for rapid data read and write operations suitable for high-speed computing and embedded applications.
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What voltage levels does this SRAM operate at?
The device operates on a 5 V supply with a tolerance of ??10%, ensuring compatibility with common industrial




